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2DA1213Y-13

Part No 2DA1213Y-13
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 50V 2A SOT89-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 500mV @ 50mA, 1A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 120 @ 500mA, 2V
Maximum Power Dissipation 1W
Frequency - Transition 160MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-89-3
Win Source Part Number 005668-2DA1213Y-13
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2DA1213Y-13 CAD Model

Description

Introducing the 2DA1213Y-13 Transistor from Diodes Incorporated

The 2DA1213Y-13 is a high-performance PNP bipolar junction transistor (BJT) designed and manufactured by Diodes Incorporated, a leading global provider of semiconductor products. This transistor is part of Diodes Incorporated's broad range of discrete, logic, analog, and mixed-signal components, designed to cater to a wide array of electronic applications. The 2DA1213Y-13 is housed in a compact SOT-23 package, making it ideal for space-constrained applications.

With its PNP configuration, the 2DA1213Y-13 is optimized for amplification and switching applications. It is capable of delivering continuous collector current up to -500 mA, which allows it to drive moderate loads in electronic circuits. The device features a collector-emitter voltage (VCEO) of -50V, ensuring robust performance for a wide range of operating conditions.

The 2DA1213Y-13 offers excellent hFE linearity, with a high current gain bandwidth product (fT), making it suitable for amplification applications at audio frequencies as well as in signal processing circuits where linearity is crucial. Its low collector-emitter saturation voltage (VCE(sat)) ensures higher efficiency and reduced power loss, which is critical for battery-powered devices and power management circuits.

Designed with reliability in mind, the 2DA1213Y-13 features a high maximum junction temperature of 150°C, providing stable performance over a wide temperature range. This makes it suitable for industrial and automotive applications where temperature extremes are common. Additionally, the device is characterized for safe operating areas and includes built-in thermal shutdown features to protect against overheating and potential damage.

The 2DA1213Y-13 transistor is RoHS compliant, reflecting Diodes Incorporated's commitment to environmental sustainability by eliminating hazardous substances in its products. This compliance ensures that the product is suitable for use in a variety of markets, including consumer electronics, computing, communications, and more, where environmental standards are strictly regulated.

In summary, the 2DA1213Y-13 from Diodes Incorporated is a versatile and reliable PNP transistor that offers excellent performance for a variety of electronic applications. Its compact design, high current capability, and thermal reliability make it an excellent choice for designers looking to optimize their circuit designs for both performance and space efficiency.

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Pricing & Ordering

Quantity Unit Price Ext. Price
315+ $0.1596 $50.2740
765+ $0.1310 $100.2150
1,185+ $0.1269 $150.3765
1,630+ $0.1228 $200.1640
2,110+ $0.1187 $250.4570
2,820+ $0.1064 $300.0480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 31,000 pieces
MOQ: 315 pcs
Order Increment : 1 pcs
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