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2DB1188Q-13

Part No 2DB1188Q-13
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 32V 2A SOT89-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 32V
Max Vce (sat) 800mV @ 200mA, 2A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 120 @ 500mA, 3V
Maximum Power Dissipation 1W
Frequency - Transition 120MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-89-3
Win Source Part Number 005672-2DB1188Q-13
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2DB1188Q-13 CAD Model

Description

Product Overview: 2DB1188Q-13 by Diodes Incorporated

The 2DB1188Q-13 is a high-performance PNP bipolar junction transistor (BJT) designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This discrete semiconductor device is engineered to deliver efficient current amplification and switching, making it an ideal choice for a wide range of electronic applications.

Key Features

  • Transistor Type: The 2DB1188Q-13 is a PNP transistor, which means it is designed to pass current from its emitter to collector when a negative base current is applied.
  • High Current Capability: This component is capable of handling a continuous collector current (Ic) of up to -1 A, providing sufficient power for various electronic circuits.
  • Low Voltage Operations: With a collector-emitter voltage (Vceo) of -50 V, it is suitable for low to medium voltage applications.
  • Power Dissipation: It has a power dissipation (Pd) of 1.25 W, ensuring reliable performance even under higher power operations.
  • High Gain Bandwidth Product: The device features a transition frequency (ft) of 80 MHz, indicating good frequency response for amplification purposes.
  • Surface-Mount Package: Packaged in a SOT-89-3, this transistor is optimized for surface-mount technology (SMT), facilitating compact PCB designs and automated assembly processes.

Applications

The 2DB1188Q-13 is versatile and can be used in a variety of electronic circuits, including but not limited to:

  • Audio Amplifiers
  • Signal Processing
  • Power Management
  • Switching Regulators
  • Driver Stages in Hi-Fi Amplifiers and Television Circuits

Quality and Reliability

Diodes Incorporated is committed to delivering high-quality products. The 2DB1188Q-13 is built to meet rigorous industry standards, ensuring reliability and performance in even the most demanding applications. It is RoHS compliant, reflecting the company's dedication to environmental sustainability and safety.

Conclusion

The 2DB1188Q-13 PNP transistor from Diodes Incorporated stands out for its high current capacity, low voltage operation, and high gain bandwidth product, making it an excellent choice for designers seeking a robust, reliable, and efficient component for their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
625+ $0.0800 $50.0000
1,340+ $0.0749 $100.3660
2,075+ $0.0724 $150.2300
2,975+ $0.0673 $200.2175
3,860+ $0.0648 $250.1280
4,820+ $0.0623 $300.2860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 300,000 pieces
MOQ: 625 pcs
Order Increment : 1 pcs
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