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2DD1766Q-13

Part No 2DD1766Q-13
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 32V 2A SOT89-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 32V
Max Vce (sat) 800mV @ 200mA, 2A
Collector Cut-off Current(Max) 1μA (ICBO)
Typical Gain (hFE) (Min) 120 @ 500mA, 3V
Maximum Power Dissipation 1W
Frequency - Transition 220MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-89-3
Win Source Part Number 1003786-2DD1766Q-13
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2DD1766Q-13 CAD Model

Description

The 2DD1766Q-13 is a high-performance NPN bipolar junction transistor (BJT) from Diodes Incorporated, designed to offer a blend of efficiency and reliability for a variety of electronic applications. This small-signal transistor is a crucial component in modern electronic circuitry, offering amplification and switching capabilities that are essential in many devices.

Key Features

  • Transistor Type: NPN - This indicates that the transistor is designed to control the movement of negative charge carriers (electrons).
  • Current - Collector (Ic) (Max): 150mA - The maximum amount of current that the collector can handle, which is suitable for moderate power applications.
  • Voltage - Collector Emitter Breakdown (Max): 50V - The maximum voltage the transistor can tolerate across the collector-emitter terminals without breaking down.
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V - The minimum current gain at a specified collector current and collector-emitter voltage, indicating the level of amplification the transistor provides.
  • Power - Max: 200mW - The maximum power dissipation of the transistor, which is an important parameter for thermal management.
  • Frequency - Transition: 250MHz - The transition frequency at which the gain of the transistor falls to 1, indicating the maximum operating frequency for the device.
  • Operating Temperature: -55°C to +150°C - The range of temperatures over which the transistor can operate reliably.
  • Mounting Type: Surface Mount - The 2DD1766Q-13 is designed for SMT applications, allowing for automated assembly processes and a reduction in board space.
  • Package / Case: SOT-23-3 - A compact package that is widely used in the industry, offering a good balance between size and thermal performance.

Applications

The 2DD1766Q-13 is suitable for a wide range of applications, including but not limited to:

  • Signal amplification in audio and video equipment
  • Switching circuits in consumer electronics
  • Driver stages in amplifiers and oscillators
  • General-purpose switching and amplification tasks

Quality and Reliability

Diodes Incorporated is committed to providing high-quality products, and the 2DD1766Q-13 is no exception. It is manufactured to meet rigorous standards, ensuring consistent performance and reliability for the end user. With its robust design and Diodes Incorporated's commitment to quality, the 2DD1766Q-13 is an excellent choice for designers looking for a dependable transistor for their electronic projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
280+ $0.2069 $57.9320
685+ $0.1698 $116.3130
1,055+ $0.1645 $173.5475
1,455+ $0.1592 $231.6360
1,880+ $0.1538 $289.1440
2,515+ $0.1379 $346.8185
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,820 pieces
MOQ: 280 pcs
Order Increment : 1 pcs
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