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2N7002-13-F

Part No 2N7002-13-F
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description DIODE
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.23 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V
Power Dissipation (Max) 370mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number 2N7002
Standard Package 1 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 541531-2N7002-13-F
Ultra Librarian 3D Model Ultra Librarian 2N7002-13-F CAD Model

Description

Product Overview: 2N7002-13-F from Diodes Incorporated

The 2N7002-13-F is a high-performance, N-channel enhancement mode Field Effect Transistor (FET) designed and manufactured by Diodes Incorporated. This compact, surface-mount transistor is widely used in a variety of applications, including power management, load switching, and signal processing, thanks to its low on-resistance and fast switching speed.

Key Features

  • Low On-Resistance: The 2N7002-13-F boasts a very low on-resistance, which enhances its efficiency in conducting current and minimizes power losses, making it ideal for power-sensitive applications.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET can operate at high frequencies, which is crucial for modern electronic applications that require rapid on-off states.
  • Low Threshold Voltage: The device operates at a low gate threshold voltage, ensuring it can be controlled with lower voltage signals, thus making it compatible with many logic-level devices.
  • SOT-23 Packaging: Encased in a small SOT-23 package, the 2N7002-13-F is designed for space-constrained applications, offering high performance in a compact footprint.
  • High Reliability: Diodes Incorporated is known for its high manufacturing standards, ensuring that the 2N7002-13-F is a reliable component for both commercial and industrial applications.

Applications

The versatility of the 2N7002-13-F allows it to be used in a wide array of applications. It is particularly suitable for:

  • Power management circuits
  • DC/DC converters
  • Motor control systems
  • LED lighting
  • Load/relay drivers
  • Logic level translation

Environmental and Quality Certifications

The 2N7002-13-F is compliant with RoHS (Restriction of Hazardous Substances) standards, ensuring that it is manufactured without the use of harmful materials. Diodes Incorporated also guarantees that this product meets various industry quality certifications, providing assurance of its durability and performance under different conditions.

With its combination of efficiency, speed, and compact design, the 2N7002-13-F from Diodes Incorporated is an excellent choice for designers looking for a reliable and versatile N-channel MOSFET for their electronic projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
690+ $0.0728 $50.2320
1,675+ $0.0598 $100.1650
2,595+ $0.0579 $150.2505
3,575+ $0.0560 $200.2000
4,615+ $0.0542 $250.1330
6,175+ $0.0486 $300.1050
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,695 pieces
MOQ: 690 pcs
Order Increment : 1 pcs
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