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IRFI4212H-117P

Part No IRFI4212H-117P
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 100V 11A 5-Pin(5+Tab) TO-220FP Tube / MOSFET 2N-CH 100V 11A TO-220FP-5
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 11A
Maximum Rds On at Id,Vgs 72.5 mOhm @ 6.6A, 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 490pF @ 50V
Maximum Power Dissipation 18W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-5 Full-Pak
Win Source Part Number 083712-IRFI4212H-117P
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRFI4212H
Introduction Date August 21, 2006
ECCN EAR99
Country of Origin China, Mexico
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRFI4212H-117P CAD Model

Description

The Infineon Technologies IRFI4212H-117P is a dual N-channel MOSFET transistor that is designed for use in power management and industrial applications.

  • Maximum Power Dissipation: 18W
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 11A @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 18nC @ 10V
  • Maximum Input Capacitance: 490pF @ 50V
  • Maximum Rds On: 72.5 mOhm @ 6.6A and 10V
  • Package: TO-220-5 Full-Pak case
  • Mounting Type: through hole
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3081 $52.3240
95+ $1.0733 $101.9635
145+ $1.0398 $150.7710
200+ $1.0062 $201.2400
260+ $0.9727 $252.9020
345+ $0.8721 $300.8745
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 28,260 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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