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74AUP1G00FX4-7

Part No 74AUP1G00FX4-7
Manufacturer Diodes Incorporated
Catalog Custom Parts (0 - A)
Description NAND Gate 1-Element 2-IN CMOS 6-Pin X2-DFN T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

High Level Output Current -4 mA
Logic Function NAND
Low Level Output Current 4 mA
Max Operating Temperature 125 °C
Max Supply Voltage 3.6 V
Min Operating Temperature -40 °C
Min Supply Voltage 800 mV
Number of Gates 1
Number of Input Lines 2
Number of Output Lines 1
Output Current 20 mA
Output Voltage 3.6 V
Propagation Delay 2.6 ns
RoHS Compliant
Win Source Part Number 1112080-74AUP1G00FX4-7
Categories Custom Parts
Manufacturer Diodes Incorporated
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 74AUP1G00FX4-7 CAD Model

Description

Diodes Incorporated 74AUP1G00FX4-7 Logic Gate

The 74AUP1G00FX4-7 is a high-performance, single 2-input NAND gate integrated circuit from Diodes Incorporated. This advanced ultra-low-power device is designed for optimized power consumption and stability, making it an ideal choice for power-sensitive applications. It operates on a very low voltage range of 0.8V to 3.6V, which allows for efficient use in battery-operated devices.

Constructed with advanced silicon-gate CMOS technology, the 74AUP1G00FX4-7 boasts a significant reduction in power dissipation compared to traditional CMOS devices. This technology also provides the benefit of increased tolerance to static discharge, enhancing the reliability and longevity of the product in various environments.

The logic gate comes in an ultra-small DFN1410-6 (X4-DFN1410-6) package, which is not only space-saving but also provides excellent thermal performance. Its miniature size and low profile make it especially suitable for the increasingly miniaturized electronic assemblies found in modern portable and wearable technology.

Key features of the 74AUP1G00FX4-7 include:

  • Low Static Power Consumption: The IC draws a very low amount of quiescent current, which contributes to the overall energy efficiency of the end product.
  • High-Speed Operation: Despite its low power design, the device does not compromise on speed, ensuring quick response times in critical applications.
  • Wide Operating Temperature Range: The device is capable of operating over a broad temperature range from -40°C to +125°C, making it suitable for industrial-grade applications.
  • Low Input Capacitance: The input capacitance is minimized, which reduces the loading effect on the driving circuit.
  • Latch-up Performance: It meets the JESD78 Class II level B standard for latch-up performance, providing additional protection against latch-up phenomena under normal operating conditions.

The 74AUP1G00FX4-7 is not just a testament to Diodes Incorporated's commitment to producing high-quality, energy-efficient components, but also a versatile building block for a wide array of electronic circuits. Whether it's for mobile phones, personal electronics, or complex computing devices, this NAND gate IC is engineered to meet the stringent requirements of an ever-evolving electronics industry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
320+ $0.1585 $50.7200
770+ $0.1301 $100.1770
1,195+ $0.1260 $150.5700
1,645+ $0.1219 $200.5255
2,125+ $0.1179 $250.5375
2,840+ $0.1057 $300.1880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 90,000 pieces
MOQ: 320 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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