Product Overview: BC847B-7-F

The BC847B-7-F is a high-performance NPN bipolar junction transistor (BJT) from Diodes Incorporated, designed for general-purpose and switching applications. This small-signal transistor is a fundamental component in a wide range of electronic circuits, offering a balanced combination of useful features that make it a go-to choice for designers and engineers alike.

Key Features

• Type: NPN
• Package: SOT-23
• Configuration: Single
• Collector-Emitter Voltage (Vceo): 45V
• Collector-Base Voltage (Vcbo): 50V
• Emitter-Base Voltage (Vebo): 6V
• Collector Current (Ic): 100mA
• Power Dissipation (Pd): 250mW
• DC Current Gain (hFE): 200 to 450
• Transition Frequency (fT): 100MHz
• Operating Temperature Range: -55°C to +150°C
• RoHS Compliant: Yes

Applications

The BC847B-7-F transistor is versatile and can be used in various applications, including:

• Pre-amplification and amplification circuits
• Switching operations in consumer electronics
• Drive circuits
• Signal processing
• Audio equipment
• Telecommunication systems

Quality and Reliability

Diodes Incorporated is known for its commitment to quality, and the BC847B-7-F is no exception. It is manufactured with the latest semiconductor technology, ensuring high reliability and performance consistency. This product is also RoHS compliant, minimizing the environmental impact by excluding hazardous substances from its manufacturing process.

Conclusion

With its robust electrical characteristics and compact SOT-23 package, the BC847B-7-F from Diodes Incorporated is an excellent choice for designers looking for a general-purpose NPN transistor. Whether for amplification, switching, or as a discrete component in a more complex circuit, this transistor offers the performance and reliability needed for a vast array of electronic applications.