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BC847BFA-7B

Part No BC847BFA-7B
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 45V 0.1A X2-DFN0806-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 300mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 2mA, 5V
Maximum Power Dissipation 435mW
Frequency - Transition 170MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Dimension 3-XFDFN
Win Source Part Number 100557-BC847BFA-7B
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BC847BFA-7B CAD Model

Description

Diodes Incorporated BC847BFA-7B NPN Bipolar Transistor

The BC847BFA-7B is a high-performance NPN bipolar (BJT) transistor from Diodes Incorporated, designed to meet the requirements of a wide array of electronic applications. This versatile component is built to offer excellent switching and amplification capabilities, making it a suitable choice for a variety of circuits, including signal processing, switching, and amplification tasks.

With its compact SOT-23 footprint, the BC847BFA-7B is ideal for space-constrained applications, providing designers with the ability to create more efficient and dense circuit layouts. The device's small size does not compromise its electrical performance, as it delivers continuous collector current (Ic) of 100mA and a collector-emitter voltage (Vceo) of 45V, ensuring reliable operation in most low-power circuits.

The transistor features a low collector-emitter saturation voltage, which translates to reduced power loss and improved efficiency, especially in switching applications. Additionally, it has a transition frequency (fT) of 100MHz, which allows it to perform well in high-speed switching and amplification roles within the circuit. This characteristic is particularly beneficial for applications in the RF and high-speed signal processing domains.

Another notable attribute of the BC847BFA-7B is its low noise figure, making it an excellent choice for audio amplifiers and other applications where signal integrity is paramount. The product is also characterized by its high gain-bandwidth product, which ensures that it maintains its gain over a wide frequency range.

Diodes Incorporated has designed the BC847BFA-7B to be robust and reliable. It can operate within a junction temperature range of -55°C to +150°C, which means it can withstand harsh operating conditions without performance degradation. The transistor also comes with the assurance of RoHS compliance, which is essential for environmentally conscious designs and global market acceptance.

In summary, the BC847BFA-7B from Diodes Incorporated is a high-quality, versatile NPN transistor that offers designers the performance and reliability needed for a broad spectrum of electronic applications, all within a miniature package that supports the development of compact, efficient electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,500+ $0.0334 $50.1000
3,650+ $0.0274 $100.0100
5,640+ $0.0266 $150.0240
7,785+ $0.0257 $200.0745
10,045+ $0.0249 $250.1205
13,455+ $0.0223 $300.0465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 31,232 pieces
MOQ: 1500 pcs
Order Increment : 1 pcs
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