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BC847BSQ-7-F

Part No BC847BSQ-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Arrays
Description GENERAL PURPOSE TRANSISTOR SOT36 / Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 100mA 100MHz 200mW Surface Mount SOT-363
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays
Manufacturer Diodes Incorporated
Packaging Reel - TR
Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V
Power - Max 200mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Surface Mount
Case / Package 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363
Base Product Number BC847BS
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Part Number 31-BC847BSQ-7-FTR
Standard Package 3,000
Win Source Part Number 1324009-BC847BSQ-7-F
Ultra Librarian 3D Model Ultra Librarian BC847BSQ-7-F CAD Model

Description

Product Overview: BC847BSQ-7-F by Diodes Incorporated

The BC847BSQ-7-F is a high-performance, dual NPN bipolar transistor from Diodes Incorporated, renowned for its compact design and electrical efficiency. Designed to meet the rigorous demands of modern electronic circuits, this product is housed in an ultra-small SOT-363 package, making it an ideal choice for space-constrained applications.

Key Features

  • Transistor Type: The device features two NPN transistors, which are widely used in amplification and switching applications.
  • Package: Comes in an SOT-363 package, known for its small footprint and low profile, which is essential for portable and miniaturized electronic devices.
  • Collector-Emitter Voltage (Vceo): It can withstand a collector-emitter voltage of up to 45V, providing a good margin for a variety of circuits.
  • Collector Current (Ic): The transistor can handle a continuous collector current of 100mA, which is suitable for driving small loads.
  • Power Dissipation: With a power dissipation of 200mW, it can efficiently handle the thermal energy produced during operation without compromising performance.
  • DC Current Gain (hFE): Features a high DC current gain, which ensures a high level of amplification in various electronic applications.
  • RoHS Compliant: The BC847BSQ-7-F is RoHS compliant, making it environmentally friendly by restricting the use of certain hazardous materials in its construction.

Applications

The dual NPN configuration of the BC847BSQ-7-F makes it highly versatile, suitable for a range of applications, including:

  • Signal processing
  • Amplification and switching
  • Linear amplification stages
  • Pre-amplifier circuits
  • Audio amplifiers
  • Low noise input stages
  • Telecommunication circuits
  • Portable and battery-powered devices

Quality and Reliability

Diodes Incorporated ensures that the BC847BSQ-7-F transistor meets the highest quality and reliability standards. Each component is subjected to rigorous testing and quality control procedures, ensuring that it performs to specifications in a wide range of environmental conditions.

Whether you are designing a new circuit or seeking a reliable transistor for your existing application, the BC847BSQ-7-F offers the performance and compactness needed to create efficient, high-quality electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4399 $50.5885
280+ $0.3610 $101.0800
430+ $0.3497 $150.3710
595+ $0.3384 $201.3480
765+ $0.3271 $250.2315
1,025+ $0.2933 $300.6325
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 120,000 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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