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BC847BV-7

Part No BC847BV-7
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Arrays
Description TRANS 2NPN 45V 0.1A SOT563
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 300mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 2mA, 5V
Maximum Power Dissipation 150mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-563
Win Source Part Number 079563-BC847BV-7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BC847BV-7 CAD Model

Description

Diodes Incorporated BC847BV-7 NPN Transistor

The BC847BV-7 is a high-performance NPN bipolar junction transistor (BJT) from Diodes Incorporated, designed for general-purpose and switching applications. This device is part of the BC847 series, which is known for its reliability and efficiency in various electronic circuits.

Encased in a compact SOT-23 surface-mount package, the BC847BV-7 is optimized for space-sensitive designs, providing designers with a versatile component that easily integrates into a wide range of electronic systems. This small footprint makes it an ideal choice for portable and miniaturized applications.

Key Features:

  • Transistor Type: The BC847BV-7 is an NPN transistor, which means it is designed to control the flow of current between the collector and emitter terminals using a small amount of current at the base terminal.
  • Current Handling: This transistor can handle a continuous collector current (Ic) of up to 100mA, making it suitable for driving moderate loads in a circuit.
  • High Gain: With a high current gain (hFE) band of 200-450, the BC847BV-7 provides excellent amplification properties for analog signals, ensuring a robust response in amplification applications.
  • Low Voltage Operation: It operates at a low collector-emitter voltage (Vceo) of 45V, which allows for safe operation in low-voltage circuits without compromising performance.
  • Power Dissipation: The device has a power dissipation rating of 250mW, which is sufficient for handling typical loads in various electronic applications without overheating.

Applications:

The BC847BV-7 is widely used in a variety of applications, including but not limited to:

  • Signal amplification in audio and radio frequency (RF) circuits
  • Switching operations in digital and mixed-signal circuits
  • Driver stages in amplifiers and regulators
  • Control circuits for power management
  • Portable and battery-operated devices

With its combination of high gain, low voltage operation, and compact form factor, the BC847BV-7 from Diodes Incorporated is a versatile and reliable choice for designers looking to enhance their electronic designs with a robust NPN transistor solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.2727 $50.4495
450+ $0.2238 $100.7100
695+ $0.2168 $150.6760
955+ $0.2098 $200.3590
1,235+ $0.2028 $250.4580
1,655+ $0.1818 $300.8790
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Availability: 5,222 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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