Product Overview

The BC847BVC-7 is a high-performance, dual NPN bipolar transistor from Diodes Incorporated. This compact transistor is designed for surface mounting on a variety of PCBs and is ideal for applications requiring space-saving components without compromising on performance. The BC847BVC-7 comes in an ultra-small DFN1006-3 (SOT-563) package, which is perfect for modern high-density electronic assemblies.

Key Features

• Transistor Type: The BC847BVC-7 features a dual NPN transistor configuration, which is suitable for amplification and switching applications.
• Package: It is housed in a DFN1006-3 (SOT-563) surface-mount package, offering a compact footprint for designs where space is at a premium.
• Power Dissipation: This component has a power dissipation of 200 mW, allowing it to handle moderate levels of power in electronic circuits.
• DC Current Gain (hFE): It boasts a high DC current gain, with a minimum hFE of 200 at 2 mA, which ensures efficient current amplification.
• Collector-Emitter Voltage: With a collector-emitter voltage (VCEO) of 45 V, it can be used in circuits with moderate voltage requirements.
• Collector Current: The BC847BVC-7 can handle a continuous collector current (IC) of up to 100 mA, making it suitable for a wide range of applications.
• RoHS Compliant: This product is RoHS compliant, meeting environmental standards by avoiding the use of hazardous substances.

Applications

The BC847BVC-7 is versatile and can be deployed in various electronic circuits. Its applications include, but are not limited to:

• General-purpose switching and amplification
• Driver stages in audio amplifiers
• Signal processing
• Power management functions
• Control systems

Quality and Reliability

Diodes Incorporated is known for its commitment to quality, and the BC847BVC-7 is no exception. It is manufactured to the highest standards, ensuring reliability and performance in your electronic projects. Whether for industrial, commercial, or consumer applications, the BC847BVC-7 is an excellent choice for designers looking for a robust, high-performance dual NPN transistor.