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BC856AS-7

Part No BC856AS-7
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Arrays
Description Trans GP BJT PNP 65V 0.1A 200mW 6-Pin SOT-363 T/R / TRANS 2PNP 65V 0.1A SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 65V
Max Vce (sat) 650mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA
Typical Gain (hFE) (Min) 125 @ 2mA, 5V
Maximum Power Dissipation 200mW
Frequency - Transition 100MHz
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-363
Win Source Part Number 011140-BC856AS-7
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 3k pcs
Family Name BC856AS
Introduction Date May 10, 2007
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian BC856AS-7 CAD Model

Description

The BC856AS-7 from Diodes Incorporated is a high-quality, small-signal PNP transistor that is a crucial component in a wide array of electronic applications. This bipolar junction transistor (BJT) is designed for general-purpose amplification and switching tasks, and it is well-suited for use in automation, consumer electronics, and power management solutions.

Key Features

  • Transistor Type: The BC856AS-7 is a PNP type transistor, which means it is designed to allow current flow when a small negative base current is applied. This is in contrast to NPN transistors, which require a positive base current.
  • Package: Encased in a robust SOT-23 package, this transistor is designed for surface-mount technology (SMT), making it ideal for modern, compact circuit designs.
  • High Current Gain: With a high current gain (hFE), this transistor can amplify weak signals to a significantly higher current, making it valuable in various signal processing applications.
  • Low Voltage Operation: It operates effectively at low voltages, making it suitable for battery-powered devices and low-power applications.
  • RoHS Compliant: Adhering to the Restriction of Hazardous Substances (RoHS) directive, the BC856AS-7 is free from hazardous materials, ensuring environmental safety and user health.

Applications

The versatility of the BC856AS-7 PNP transistor allows it to be used in a multitude of electronic circuits. Some common applications include:

  • Signal amplification in audio devices
  • Switching operations in power supplies
  • Driver stages in amplifiers
  • Load management in battery-operated devices
  • Current source and sink configurations

Technical Specifications

Parameter Value Collector-Emitter Voltage (VCEO) 65V Collector-Base Voltage (VCBO) 80V Emitter-Base Voltage (VEBO) 6V Continuous Collector Current (IC) 100mA Power Dissipation (Pd) 250mW Operating and Storage Junction Temperature Range -55 to +150°C

With its reliable performance and environmental compliance, the BC856AS-7 from Diodes Incorporated is a preferred choice for designers looking to create efficient and durable electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,435+ $0.0349 $50.0815
3,500+ $0.0286 $100.1000
5,420+ $0.0277 $150.1340
7,465+ $0.0268 $200.0620
9,655+ $0.0259 $250.0645
12,880+ $0.0233 $300.1040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 63,080 pieces
MOQ: 1435 pcs
Order Increment : 1 pcs
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