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BC857CT-7-F

Part No BC857CT-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 45V 0.1A SOT-523
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 650mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 420 @ 2mA, 5V
Maximum Power Dissipation 150mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-523
Win Source Part Number 011163-BC857CT-7-F
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name BC857CT
Introduction Date October 07, 2002
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian BC857CT-7-F CAD Model

Description

Diodes Incorporated BC857CT-7-F PNP Transistor

The BC857CT-7-F from Diodes Incorporated is a surface-mount, PNP bipolar junction transistor (BJT) specifically designed for general-purpose amplification and switching applications. This high-performance transistor is a suitable choice for a variety of electronic circuits, offering a blend of low power consumption and efficient operation.

Key Features

  • Transistor Type: PNP - This transistor type is characterized by a negative-positive-negative configuration, making it ideal for use in positive-ground circuits.
  • Package: SOT-523 - The small outline transistor package is designed for space-saving on printed circuit boards, while providing adequate thermal performance.
  • VCEO: 45V - The maximum collector-emitter voltage rating ensures the transistor can handle moderate voltage applications without breakdown.
  • IC: 100mA - A maximum collector current rating of 100 milliamperes makes this transistor suitable for small signal amplification.
  • Power Dissipation: 200mW - With a power dissipation capability of 200 milliwatts, the BC857CT-7-F can manage a fair amount of power for its size.
  • DC Current Gain (hFE): The high current gain ensures efficient current amplification, making it effective for a range of applications.
  • Complementary NPN Type Available: For applications requiring a push-pull configuration, a complementary NPN transistor is also available.
  • RoHS Compliant: The product meets the requirements of the Restriction of Hazardous Substances Directive, making it environmentally friendly and suitable for use in various international markets.

Applications

The BC857CT-7-F transistor is versatile and can be used in various electronic devices and circuits. Its applications include, but are not limited to:

  • Signal amplification in audio devices
  • Driver stages in amplifiers
  • Switching operations in digital circuits
  • Power management in portable electronics
  • Voltage regulation modules

With its reliable performance and compact form factor, the BC857CT-7-F from Diodes Incorporated is an excellent choice for designers and engineers looking to incorporate a dependable PNP transistor into their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,400+ $0.0358 $50.1200
3,405+ $0.0294 $100.1070
5,285+ $0.0284 $150.0940
7,275+ $0.0275 $200.0625
9,400+ $0.0266 $250.0400
12,555+ $0.0239 $300.0645
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 222,000 pieces
MOQ: 1400 pcs
Order Increment : 1 pcs
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