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BC858C-7-F

Part No BC858C-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 30V 0.1A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 30V
Max Vce (sat) 650mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA
Typical Gain (hFE) (Min) 420 @ 2mA, 5V
Maximum Power Dissipation 300mW
Frequency - Transition 200MHz
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Win Source Part Number 200499-BC858C-7-F
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BC858C-7-F CAD Model

Description

Product Overview: BC858C-7-F - Diodes Incorporated

The BC858C-7-F from Diodes Incorporated is a high-quality PNP bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This small-signal transistor is particularly suited for low power amplification and switching, making it an essential component in consumer electronics, industrial control systems, and communication devices.

Key Features

  • Type: PNP Bipolar Junction Transistor
  • Package: SOT-23, a small surface-mount package that is ideal for space-constrained applications.
  • Configuration: Single
  • Collector-Emitter Voltage (VCEO): -30V, providing a good margin for various circuit designs.
  • Collector Current (IC): -100mA, suitable for low power applications.
  • Power Dissipation (Pd): 300mW, ensuring reliable operation under typical usage conditions.
  • DC Current Gain (hFE): 420 at 2mA, indicating a high level of amplification capability.
  • Operating Temperature Range: -55°C to +150°C, enabling the device to perform reliably in a wide range of environmental conditions.
  • RoHS Compliant: Yes, meeting environmental standards and restrictions on hazardous substances.

Applications

The BC858C-7-F transistor is versatile and can be used in various applications, such as:

  • Signal amplification in audio devices and receivers
  • Driver stages in amplifiers and switches
  • Voltage regulation circuits
  • Low-power inverters
  • General-purpose switching applications

Quality and Reliability

Diodes Incorporated is known for its commitment to quality and reliability. The BC858C-7-F is manufactured with the highest standards to ensure consistent performance and longevity. Each transistor undergoes rigorous testing and quality control measures to meet the demands of various industries.

For designers and engineers looking for a reliable PNP transistor with a compact footprint, the BC858C-7-F is an excellent choice. Its combination of electrical characteristics and thermal performance makes it a go-to component for both prototyping and mass production.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,715+ $0.0292 $50.0780
4,185+ $0.0239 $100.0215
6,470+ $0.0232 $150.1040
8,930+ $0.0224 $200.0320
11,525+ $0.0217 $250.0925
15,385+ $0.0195 $300.0075
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 441,000 pieces
MOQ: 1715 pcs
Order Increment : 1 pcs
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