Product Overview: BSS138-7-01-F from Diodes Incorporated

The BSS138-7-01-F is a high-performance N-Channel Logic Level Enhancement Mode Field Effect Transistor (MOSFET) designed and manufactured by Diodes Incorporated. This MOSFET is a versatile component widely used in a variety of electronic applications due to its efficient power control, low on-resistance, and high-speed switching capabilities.

Key Features

• Low On-Resistance: The BSS138-7-01-F boasts a very low on-resistance, which ensures minimal power loss and heat generation during operation, making it suitable for power-sensitive circuits.
• High-Speed Switching: With its fast switching speeds, this MOSFET is ideal for high-frequency applications, including switching power supplies and PWM circuits.
• Logic Level Gate Drive: It can be directly driven by logic-level voltages, making it compatible with microcontroller and logic circuit interfaces without the need for additional driver circuits.
• SOT-23 Package: The compact SOT-23 package is designed for space-saving on PCBs and is suitable for automated assembly processes, offering a practical solution for high-density board designs.
• RoHS Compliant: The BSS138-7-01-F is compliant with RoHS standards, ensuring that it meets environmental and safety requirements by avoiding the use of hazardous substances.

Applications

The BSS138-7-01-F is commonly used in a broad range of applications, including but not limited to:

• Load/Power Switching
• DC-DC Converters
• Motor Drive Controls
• Relay Replacement
• Battery Management Systems
• Level Shifters

Technical Specifications

With a continuous drain current of 200mA and a gate-source voltage of ±20V, the BSS138-7-01-F is capable of handling moderate current loads while operating at a maximum junction temperature of 150°C. Its threshold voltage is typically 1.5V, which ensures that the device can be activated with low input voltages.

In summary, the BSS138-7-01-F from Diodes Incorporated is a reliable and efficient solution for designers looking for a MOSFET with low on-resistance, high-speed switching, and logic level compatibility. Its small footprint and compliance with environmental standards make it a preferred choice for modern electronic designs.