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BSS84TA

Part No BSS84TA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 50V 130MA SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 1mA
Max Input Capacitance 40pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 360mW (Ta)
Maximum Rds On at Id,Vgs 10 Ohm @ 100mA, 5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 100600-BSS84TA
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Communications & Networking, Power Management, Computers & Computer Peripherals
Ultra Librarian 3D Model Ultra Librarian BSS84TA CAD Model

Description

Introducing the BSS84TA P-Channel MOSFET by Diodes Incorporated

The BSS84TA is a high-performance, P-Channel enhancement mode field-effect transistor (MOSFET) designed by the reputable semiconductor manufacturer, Diodes Incorporated. This compact and efficient semiconductor device is a crucial component in modern electronic circuits, offering low on-resistance and a high threshold voltage that ensures reliable operation even in the most demanding applications.

Encased in a robust SOT-23 package, the BSS84TA is engineered to deliver optimal performance with a minimal footprint, making it an ideal choice for space-constrained applications. With a drain-source voltage (VDS) of -50V and a continuous drain current (ID) of -130mA, this MOSFET is capable of handling moderate power levels while maintaining energy efficiency, which is essential for battery-powered devices.

The device features a low gate threshold voltage (VGS(th)), which makes it suitable for low-voltage switching applications. The low on-resistance (RDS(on)) minimizes power loss and heat generation, thus enhancing the overall system reliability and performance. Additionally, the BSS84TA's fast switching speed is an asset for high-frequency circuits, contributing to reduced switching losses and improved circuit efficiency.

Applications for the BSS84TA are diverse, ranging from power management tasks in portable electronics to load switching in industrial systems. It is commonly utilized in applications such as load switches, battery management, power conversion, and motor control circuits. Its ability to switch high-speed signals makes it also suitable for high-speed line drivers and charge pumps.

When integrating the BSS84TA into your design, you can be confident in its compliance with RoHS standards, ensuring an environmentally friendly product. Diodes Incorporated's commitment to quality and performance is evident in this MOSFET, which is designed to meet the stringent requirements of a wide array of electronic applications.

In summary, the BSS84TA from Diodes Incorporated is a versatile and reliable P-Channel MOSFET that offers excellent performance in a small package, making it a top choice for designers looking to optimize their power management strategies in compact electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,855+ $0.0312 $57.8760
4,505+ $0.0256 $115.3280
6,980+ $0.0249 $173.8020
9,620+ $0.0240 $230.8800
12,440+ $0.0233 $289.8520
16,670+ $0.0208 $346.7360
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,960 pieces
MOQ: 1855 pcs
Order Increment : 1 pcs
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