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BSS84TC

Part No BSS84TC
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 50V 0.13A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 1mA
Max Input Capacitance 40pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 360mW (Ta)
Maximum Rds On at Id,Vgs 10 Ohm @ 100mA, 5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 201427-BSS84TC
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Communications & Networking, Power Management, Computers & Computer Peripherals
Ultra Librarian 3D Model Ultra Librarian BSS84TC CAD Model

Description

Product Overview: BSS84TC from Diodes Incorporated

The BSS84TC is a high-performance P-Channel MOSFET provided by Diodes Incorporated, a leading manufacturer in the semiconductor market. This device is designed to deliver efficient power management and signal processing in a compact package, making it suitable for a wide range of applications. Its small footprint and low on-resistance are particularly advantageous for portable electronics where space is at a premium and power efficiency is crucial.

Key Features

  • Device Type: P-Channel MOSFET
  • Configuration: Single
  • Drain-Source Voltage (Vds): -60V
  • Continuous Drain Current (Id): -130mA
  • Power Dissipation (Pd): 350mW
  • RDS(on): Very low on-resistance at 10V
  • Package: SOT-23

The BSS84TC's P-Channel configuration allows for easy integration into low-voltage applications. It operates at a drain-source voltage of -60V, which is suitable for many electronic circuits. The continuous drain current of -130mA ensures that the MOSFET can handle typical loads without overheating or failing.

One of the standout features of the BSS84TC is its low on-resistance, which minimizes losses and improves efficiency, particularly when switching or controlling high-speed signals. The power dissipation of 350mW indicates that the device can handle a fair amount of power for its size before requiring additional heat sinking or thermal management solutions.

The BSS84TC comes in a SOT-23 package, which is widely used in the industry due to its small size and ease of integration into various circuit designs. This makes it an excellent choice for space-constrained applications such as mobile devices, wearables, and IoT devices.

In conclusion, the BSS84TC P-Channel MOSFET from Diodes Incorporated is an outstanding choice for designers looking for a reliable, high-performance component that can deliver power efficiency in a tiny package. Whether for power management, load switching, or signal processing, the BSS84TC is well-suited to meet the needs of modern electronic devices.

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