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DDTA114YKA-7-F

Part No DDTA114YKA-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 200MW SC59-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 68 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package SC-59-3
Win Source Part Number 106410-DDTA114YKA-7-F
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DDTA114YKA-7-F CAD Model

Description

Diodes Incorporated DDTA114YKA-7-F PNP Pre-Biased Transistor

The DDTA114YKA-7-F from Diodes Incorporated is a PNP pre-biased small signal transistor, designed for use in a wide range of electronic applications. This semiconductor is a practical solution for designers looking for a device that combines efficiency with high performance. The pre-biased feature of the transistor simplifies circuit design by reducing component count, which in turn can save on both board space and cost.

This transistor is housed in a compact SOT-23 package, making it suitable for high-density mounting and allowing for its integration into space-constrained designs. Despite its small size, the DDTA114YKA-7-F is robust and capable of delivering consistent performance.

Key specifications of the DDTA114YKA-7-F include a continuous collector current of up to 100mA and a collector-emitter voltage (Vceo) rated at 50V. It also features a built-in resistor, which eliminates the need for an external base resistor, further simplifying the design process. This integrated resistor has a resistance of 10kΩ, which is connected between the base and emitter of the transistor. Additionally, the device offers a maximum power dissipation of 150mW, ensuring that it can handle a fair amount of power for its size.

The DDTA114YKA-7-F is designed with performance and reliability in mind. It provides low saturation voltage and high gain, which is essential for amplification applications. Due to its PNP configuration, it is commonly used in switching and amplification circuits where a negative polarity is required.

Applications for the DDTA114YKA-7-F are diverse and include but are not limited to: signal processing, power management, load switching, and as a driver transistor for LEDs and other low-power devices. Its versatility makes it an excellent choice for designers working on consumer electronics, industrial control systems, and portable devices.

Diodes Incorporated's commitment to quality ensures that the DDTA114YKA-7-F meets the stringent requirements of the electronics industry. The product is also RoHS compliant, reflecting the company's dedication to environmental responsibility. With its combination of features, the DDTA114YKA-7-F is an excellent addition to any electronic project that demands reliability and efficiency.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $21.1261 $63.3783
7+ $17.3342 $121.3394
11+ $16.7925 $184.7175
15+ $16.2509 $243.7635
19+ $15.7092 $298.4748
25+ $14.0841 $352.1025
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Availability: 9,000 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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