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DDTB122LU-7-F

Part No DDTB122LU-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 200MW SOT323
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 220
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 56 @ 50mA, 5V
Max Vce (sat) 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package SOT-323
Win Source Part Number 000542-DDTB122LU-7-F
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DDTB122LU-7-F CAD Model

Description

Introducing the DDTB122LU-7-F PNP Transistor from Diodes Incorporated

The DDTB122LU-7-F is a high-quality PNP bipolar junction transistor (BJT) designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This particular transistor is part of their broad portfolio of components that cater to the ever-growing demands of the electronics industry.

Featuring a compact SOT-23 package, the DDTB122LU-7-F is engineered for surface-mount technology (SMT), making it suitable for high-density PCB designs. Its small form factor is advantageous for modern electronic applications where space is at a premium, without compromising on performance.

Key Specifications:

  • Transistor Polarity: PNP - This transistor is a PNP device, meaning the majority charge carriers are holes, and it is designed for use in applications where the current flows from the emitter to the collector.
  • Collector-Emitter Voltage (Vceo): -50V - This rating ensures that the transistor can handle significant voltage levels between the collector and emitter terminals without breakdown.
  • Collector Current (Ic): -500mA - The DDTB122LU-7-F can control a considerable amount of current, making it suitable for driving loads in various circuits.
  • Power Dissipation (Pd): 300mW - This transistor can dissipate a moderate amount of power, which is essential for maintaining stability and reliability during operation.
  • DC Current Gain (hFE): 120 to 560 - This range of current gain allows for amplification of the input signal, which is a critical characteristic for many electronic applications.
  • Operating Temperature Range: -55°C to +150°C - The DDTB122LU-7-F can operate effectively across a wide temperature range, ensuring reliability in various environmental conditions.

The DDTB122LU-7-F is ideal for use in switch and amplifier applications. Its PNP configuration makes it a versatile choice for complementary designs when paired with an NPN transistor. Additionally, its robust voltage and current handling capabilities make it suitable for a broad range of applications, including but not limited to signal processing, power management, and consumer electronics.

With its combination of performance, compact size, and reliability, the DDTB122LU-7-F from Diodes Incorporated is an excellent choice for designers and engineers looking to create efficient and compact electronic solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4484 $57.9360
100+ $1.1885 $118.8500
155+ $1.1515 $178.4825
210+ $1.1146 $234.0660
270+ $1.0776 $290.9520
360+ $0.9656 $347.6160
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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