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DDTB133HC-7-F

Part No DDTB133HC-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 200MW SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 3.3k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 56 @ 50mA, 5V
Max Vce (sat) 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package SOT-23-3
Win Source Part Number 1032761-DDTB133HC-7-F
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DDTB133HC-7-F CAD Model

Description

Diodes Incorporated DDTB133HC-7-F PNP Pre-Biased Small Signal SOT-23 Transistor

The DDTB133HC-7-F from Diodes Incorporated is a high-performance PNP pre-biased small signal transistor encapsulated in a compact SOT-23 package. This device is designed to offer a combination of a PNP transistor and a resistor in a single package, providing a convenient solution for various switching and amplification applications. The integrated bias resistor helps to simplify circuit design and reduce component count, making it ideal for space-constrained applications.

With its pre-biased configuration, the DDTB133HC-7-F allows for a reduction in board space and can lead to a more cost-effective and reliable circuit design. The built-in resistors are precisely engineered to provide stable characteristics, ensuring consistent performance across various environmental conditions.

The transistor has a continuous collector current of -100mA and a collector-emitter voltage of -50V, making it suitable for moderate power handling applications. Its low V<sub>CE(sat) ensures lower power dissipation and improved efficiency, which is crucial for battery-powered devices. Additionally, the device offers a gain bandwidth product (f<sub>T) of 250MHz, which is beneficial for high-frequency operations.

Key features of the DDTB133HC-7-F include:

  • Integrated bias resistor for ease of design
  • Compact SOT-23 package suitable for automated assembly processes
  • Low saturation voltage to enhance power efficiency
  • High gain bandwidth product for better performance in frequency-sensitive applications
  • RoHS compliant and lead-free, ensuring environmental sustainability

Applications for the DDTB133HC-7-F are diverse and can range from power management in portable devices, signal processing, and control systems to various consumer electronics such as smartphones, tablets, and laptops. It can also be used in interface circuits, driver stages of amplifiers, and as a switch in numerous types of electronic equipment.

Overall, the DDTB133HC-7-F from Diodes Incorporated is an excellent choice for designers looking for a reliable, high-performance PNP transistor with the added convenience of an integrated bias resistor. Its small footprint and efficient operation make it a versatile component for a wide array of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6214 $59.0330
230+ $0.5094 $117.1620
355+ $0.4943 $175.4765
485+ $0.4782 $231.9270
625+ $0.4620 $288.7500
840+ $0.4146 $348.2640
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,000 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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