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DDTB142TC-7-F

Part No DDTB142TC-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 200MW SOT23-3
Datasheet
Sample
ECAD Module ECAD
rohs

Shipping Information

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Pricing & Ordering $0.4229 Historical reference price : is the price that a customer announces that it is willing to pay for this component in the previous period, only for reference.
Quantity
Unit Price
Ext. Price
90+
$0.5820
$52.380
210+
$0.4780
$100.380
325+
$0.4630
$150.475
450+
$0.4480
$201.600
580+
$0.4330
$251.140
775+
$0.3880
$300.700
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability: 3,060 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 470
Typical Gain (hFE) (Min) 100 @ 5mA, 5V
Max Vce (sat) 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max) 500nA (ICBO)
Frequency - Transition 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package SOT-23-3
Win Source Part Number 1032762-DDTB142TC-7-F
Popularity Medium
Fake Threat In the Open Market 67 pct.
Supply and Demand Status Balance

Description

Introducing the DDTB142TC-7-F from Diodes Incorporated

The DDTB142TC-7-F is a robust, high-performance digital transistor designed and manufactured by the renowned semiconductor company, Diodes Incorporated. This product is a testament to the company's commitment to providing quality components that meet the demanding requirements of modern electronic applications.

At the heart of the DDTB142TC-7-F lies a PNP bipolar transistor with a built-in biasing resistor network. This integration simplifies circuit design and reduces component count, leading to more compact and reliable end products. The transistor is housed in a small SOT-523 package, which is well-suited for space-constrained applications.

Key Features:

  • Integrated Biasing Resistors: The built-in resistors are optimized to provide excellent hFE linearity, ensuring stable performance across various operating conditions.
  • Low VCE(sat): The device exhibits a low collector-emitter saturation voltage, which translates to reduced power dissipation and improved energy efficiency.
  • High Current Gain: With a high current gain (hFE), this transistor can amplify weak input signals effectively, making it ideal for a wide range of amplification tasks.
  • RoHS Compliant: The DDTB142TC-7-F is compliant with the RoHS directive, which means it is free from hazardous substances such as lead, making it an environmentally friendly choice for electronic designs.

Applications:

The versatility of the DDTB142TC-7-F allows it to be used in various applications, including but not limited to:

  • Signal processing
  • Power management
  • Switching circuits
  • Driver stages in audio amplifiers
  • Control systems

Diodes Incorporated's DDTB142TC-7-F is a reliable choice for designers and engineers looking to enhance the performance of their electronic circuits without compromising on space or power efficiency. Its combination of integrated biasing resistors, low saturation voltage, and high current gain makes it a versatile component that can be deployed in a multitude of applications, from consumer electronics to industrial control systems.

With its compliance to RoHS standards, the DDTB142TC-7-F is not only a high-performance component but also an environmentally conscious one, aligning with global efforts to create more sustainable electronic products.

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