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DMG1012TQ-7

Part No DMG1012TQ-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 630MA SOT523
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 31 Weeks
Features N-Channel 20 V 630mA (Ta) 280mW (Ta) Surface Mount SOT-523
Manufacturer Diodes Incorporated
Series Automotive, AEC-Q101
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package SOT-523
Case / Package SOT-523
Family Name DMG1012
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Part Number DMG1012TQ-7-ND, DMG1012TQ-7DICT, DMG1012TQ-7DITR, DMG1012TQ-7DIDKR
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 868898-DMG1012TQ-7
Ultra Librarian 3D Model Ultra Librarian DMG1012TQ-7 CAD Model

Description

DMG1012TQ-7 - High-Performance MOSFET by Diodes Incorporated

The DMG1012TQ-7 is a state-of-the-art MOSFET transistor designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This MOSFET is part of Diodes Incorporated's extensive range of discrete, analog, and mixed-signal components that cater to a wide array of electronic applications.

Constructed with advanced trench technology, the DMG1012TQ-7 offers excellent R<sub>DS(on) and low gate charge, making it a highly efficient choice for power management tasks. Its compact size and low profile (1.0 x 0.6 x 0.5mm) in a SOT-523 package make it an ideal selection for space-constrained applications, without compromising on performance.

The DMG1012TQ-7 boasts a drain-source voltage (V<sub>DS) of 20V and a continuous drain current (I<sub>D) of 540mA at a temperature of 25°C, which showcases its capability to handle moderate power requirements in electronic circuits. With its fast switching speed and robust thermal performance, this MOSFET is perfectly suited for high-efficiency power conversion and switching applications.

Key Features:

  • Low on-resistance (R<sub>DS(on))
  • High-speed switching
  • Low gate threshold voltage (V<sub>GS(th))
  • High forward transconductance (g<sub>fs)
  • ESD protected gate
  • Halogen and Lead-Free, RoHS compliant

Applications:

  • Power management
  • Battery protection
  • Load switch
  • DC-DC converters
  • Power amplification

The DMG1012TQ-7 is not only optimized for performance but also for reliability. It features an extended operating temperature range and is designed to meet the rigorous demands of commercial and industrial electronic devices. Whether in portable electronics, power supplies, or motor control circuits, the DMG1012TQ-7 provides designers with a flexible and dependable MOSFET solution.

With its combination of efficiency, compactness, and durability, the DMG1012TQ-7 from Diodes Incorporated represents an excellent choice for engineers and designers looking to enhance the power handling capabilities of their next-generation electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
610+ $0.0826 $50.3860
1,295+ $0.0774 $100.2330
2,010+ $0.0748 $150.3480
2,880+ $0.0695 $200.1600
3,740+ $0.0669 $250.2060
4,670+ $0.0643 $300.2810
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 90,000 pieces
MOQ: 610 pcs
Order Increment : 1 pcs
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