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DMG1013T

Part No DMG1013T
Manufacturer Diodes Incorporated
Catalog END - OF - LIFE
Description P-CHANNEL ENHANCEMENT MODE MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Diodes Incorporated
Win Source Part Number 1168054-DMG1013T
Manufacturer Homepage www.diodes.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMG1013T CAD Model

Description

Overview of DMG1013T from Diodes Incorporated

The DMG1013T is a high-performance, P-Channel enhancement mode MOSFET designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This MOSFET is part of Diodes Incorporated's extensive range of power management devices, catering to the needs of energy-efficient and compact design solutions.

Key Features

  • Low On-Resistance: The DMG1013T offers a very low on-resistance (RDS(on)), which translates to reduced power loss and improved efficiency in applications where it is deployed.
  • High Power Dissipation: With an ability to handle a substantial amount of power dissipation, this MOSFET is suitable for various power-intensive applications.
  • Small Package Size: Available in a small SOT-523 package, the DMG1013T is ideal for space-constrained applications, allowing for more compact circuit designs.
  • Low Threshold Voltage: The device has a low threshold voltage, ensuring that it can be easily driven by low-voltage control signals, making it compatible with modern microcontrollers and logic circuits.

Applications

The DMG1013T is versatile and can be used in a wide range of applications. Some of the typical applications include:

  • Power Management Circuits
  • Load Switching
  • Battery Management Systems
  • Portable Devices
  • DC-DC Converters

Technical Specifications

Below are some of the key technical specifications of the DMG1013T:

  • Drain-Source Voltage (VDS): -20V
  • Continuous Drain Current (ID): -1.6A
  • Power Dissipation (PD): 0.5W
  • Operating Temperature Range: -55°C to +150°C

Conclusion

The DMG1013T P-Channel MOSFET by Diodes Incorporated stands out for its low on-resistance, high power dissipation capabilities, and compact form factor. It offers a reliable and efficient solution for designers looking to optimize power management in their electronic systems. With its broad operating temperature range and low threshold voltage, the DMG1013T is an excellent choice for a variety of applications where performance and space are critical considerations.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,845+ $0.0176 $50.0720
6,945+ $0.0144 $100.0080
10,715+ $0.0140 $150.0100
14,815+ $0.0135 $200.0025
19,085+ $0.0131 $250.0135
25,645+ $0.0117 $300.0465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 66,360 pieces
MOQ: 2845 pcs
Order Increment : 1 pcs
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