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DMG10N60SCT

Part No DMG10N60SCT
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 12A TO220AB
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features N-Channel 600 V 12A (Tc) 178W (Tc) Through Hole TO-220AB
Manufacturer Diodes Incorporated
Package Tube
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Through Hole
Package TO-220-3
Case / Package TO-220AB
Family Name DMG10
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 50
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 868902-DMG10N60SCT
Ultra Librarian 3D Model Ultra Librarian DMG10N60SCT CAD Model

Description

DMG10N60SCT - N-Channel MOSFET by Diodes Incorporated

The DMG10N60SCT is a high-performance N-Channel MOSFET engineered by Diodes Incorporated, a leading manufacturer in the semiconductor market. This power MOSFET is designed to deliver efficient power management and conversion for a wide range of applications, including switching power supplies, motor drives, and power management tasks.

Characterized by its low on-resistance and high switching speed, the DMG10N60SCT ensures minimal power loss and heat generation, making it an ideal choice for energy-sensitive designs. The device is capable of handling continuous drain currents up to 10A, which makes it suitable for handling moderate power loads while maintaining high efficiency.

Key Features:

  • High Current Capability: With a continuous drain current of 10A, this MOSFET can handle significant power levels, suitable for a variety of demanding applications.
  • Low On-Resistance (R<sub>DS(on)): The low on-resistance minimizes conduction losses and improves overall efficiency, which is critical for power-sensitive designs.
  • High-Speed Switching: The fast switching capability of the DMG10N60SCT allows for efficient operation at high frequencies, which is beneficial for applications like SMPS (Switched-Mode Power Supply).
  • High Voltage Tolerance: With a drain-source voltage (V<sub>DSS) of 600V, it is capable of withstanding high voltage conditions, making it robust for industrial applications.
  • TO-220C Package: The device comes in a TO-220C package, known for its good thermal and electrical performance, as well as ease of mounting on heat sinks for enhanced thermal management.

Applications:

The versatility of the DMG10N60SCT allows it to be used in a variety of applications, including:

  • Power Supply Units (PSUs)
  • DC-DC Converters
  • Motor Drives and Controllers
  • Inverters
  • Power Factor Correction (PFC) Circuits

In summary, the DMG10N60SCT N-Channel MOSFET from Diodes Incorporated is a reliable and efficient solution for designers looking to optimize power management in their electronic circuits. Its robust performance, coupled with a package designed for optimal thermal management, makes it a go-to component for engineers across various industries.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3611 $61.2495
105+ $1.1168 $117.2640
165+ $1.0819 $178.5135
225+ $1.0470 $235.5750
290+ $1.0122 $293.5380
385+ $0.9074 $349.3490
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,520 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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