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DMG2301L-13

Part No DMG2301L-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 3A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Series -
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 120mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.5 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 476 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1.5W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number DMG2301
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1376764-DMG2301L-13
Ultra Librarian 3D Model Ultra Librarian DMG2301L-13 CAD Model

Description

DMG2301L-13 P-Channel Enhancement Mode MOSFET by Diodes Incorporated

The DMG2301L-13 is a high-performance, P-Channel enhancement mode field effect transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, analog, and mixed-signal semiconductor markets. This particular MOSFET is engineered to deliver efficient power control and switching operations in a wide array of electronic applications.

Encased in a compact SOT-23 package, the DMG2301L-13 MOSFET is optimized for space-sensitive and power-intensive applications. Its P-Channel configuration allows for a simpler and more efficient drive circuitry, especially in low-voltage operations, making it a popular choice for portable and battery-powered devices, where power conservation is crucial.

With a drain-source voltage (V<sub>DS) of -20V and a continuous drain current (I<sub>D) of -3.2A, this MOSFET is capable of handling moderate power levels while maintaining low on-state resistance (R<sub>DS(on)). The low threshold voltage ensures that the device can be easily turned on with low gate voltages, enhancing its suitability for low-voltage drive applications.

The DMG2301L-13 also features fast switching speeds, which is an essential attribute for high-efficiency power management. This, combined with its low power dissipation, contributes to the overall energy efficiency of the end application. Additionally, the device is designed with robustness in mind; it includes built-in protection against electrostatic discharge (ESD), safeguarding the MOSFET from unexpected electrical spikes that could potentially damage the device during handling or operation.

Applications for the DMG2301L-13 are diverse and include load switch circuits, power management in portable and mobile devices, battery management systems, and other circuits where high-speed switching and power efficiency are required. Its reliability and performance make it an excellent choice for designers looking to optimize their power management solutions.

As with all Diodes Incorporated products, the DMG2301L-13 is supported by comprehensive technical documentation, ensuring that engineers can fully leverage the benefits of this high-quality MOSFET in their designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
880+ $0.0571 $50.2480
1,870+ $0.0535 $100.0450
2,905+ $0.0517 $150.1885
4,160+ $0.0481 $200.0960
5,400+ $0.0463 $250.0200
6,745+ $0.0445 $300.1525
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 110,550 pieces
MOQ: 880 pcs
Order Increment : 1 pcs
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