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DMG3415UFY4-7

Part No DMG3415UFY4-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 16V 2.5A 3-Pin DFN T/R / MOSFET P-CH 16V 2.5A DFN-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 16V
Continuous Drain Current at 25°C 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 10nC @ 4.5V
Max Input Capacitance 281.9pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 400mW (Ta)
Maximum Rds On at Id,Vgs 39 mOhm @ 4A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DFN2015H4-3
Dimension 3-XFDFN
Win Source Part Number 107655-DMG3415UFY4-7
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name DMG3415UFY4
Introduction Date December 15, 2009
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian DMG3415UFY4-7 CAD Model

Description

Diodes Incorporated DMG3415UFY4-7 P-Channel MOSFET

The DMG3415UFY4-7 is a high-performance P-Channel enhancement mode MOSFET brought to you by Diodes Incorporated, a renowned manufacturer of semiconductor products. This MOSFET is designed to deliver efficient power management and switching with a focus on miniaturization, making it an ideal choice for space-constrained applications.

With its ultra-small DFN2020 package, the DMG3415UFY4-7 offers an excellent solution for portable electronics where size and efficiency are critical. The device features a drain-source voltage (V<sub>DS) of -20V and a continuous drain current (I<sub>D) of -6.5A, ensuring robust performance for a wide range of applications. Furthermore, the low threshold voltage ensures that the MOSFET can be driven at lower gate voltages, which is particularly beneficial for battery-operated devices.

The DMG3415UFY4-7 also boasts a low on-resistance (R<sub>DS(on)) of just 33mΩ at V<sub>GS = -4.5V, which translates to reduced conduction losses and improved overall efficiency. This characteristic is essential for power-sensitive designs, as it helps in extending battery life and reducing thermal stress on components.

Designed for high-speed switching, this MOSFET is equipped with fast switching characteristics, making it suitable for high-frequency power converters and load switch applications. Additionally, the device is characterized by its low input capacitance and gate charge, which further enhances its switching performance.

The DMG3415UFY4-7 is also RoHS-compliant and halogen-free, adhering to current environmental standards and regulations. This commitment to eco-friendliness ensures that the product can be used in a wide variety of markets without concern for regulatory compliance.

In summary, the DMG3415UFY4-7 from Diodes Incorporated is a compact, efficient, and reliable P-Channel MOSFET that offers designers the flexibility and performance needed for today's power management applications. Whether you are developing portable electronics, power supplies, or any other application requiring a high-quality P-Channel MOSFET, the DMG3415UFY4-7 is an excellent choice.

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Pricing & Ordering

Quantity Unit Price Ext. Price
500+ $0.1160 $58.0000
1,215+ $0.0952 $115.6680
1,880+ $0.0923 $173.5240
2,590+ $0.0893 $231.2870
3,350+ $0.0863 $289.1050
4,480+ $0.0774 $346.7520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 80,400 pieces
MOQ: 500 pcs
Order Increment : 1 pcs
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