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DMG4407SSS

Part No DMG4407SSS
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 9.9A 8-SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 20.5nC @ 10V
Max Input Capacitance 2246pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 1.45W (Ta)
Maximum Rds On at Id,Vgs 11 mOhm @ 12A, 20V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 203319-DMG4407SSS
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian DMG4407SSS CAD Model

Description

DMG4407SSS P-Channel MOSFET by Diodes Incorporated

The DMG4407SSS is a high-performance P-Channel enhancement mode MOSFET from the reputable semiconductor manufacturer, Diodes Incorporated. This MOSFET is designed to deliver efficient power management and control across a variety of applications. It is housed in a compact DFN2020-6 (Type B) package, which is known for its small footprint and excellent thermal performance.

With a -40V drain-source breakdown voltage (V<sub>DS), the DMG4407SSS is suitable for a range of applications that require efficient power handling capabilities. Its continuous drain current (I<sub>D) of -8.5A ensures that it can handle significant power without overheating, making it an ideal choice for high-density power applications. The device also features a low on-resistance (R<sub>DS(on)) of 7.5mΩ at V<sub>GS = -10V, which minimizes power loss and improves overall efficiency.

One of the key advantages of the DMG4407SSS is its fast switching speed, which is facilitated by the low total gate charge (Q<sub>G). This makes the MOSFET an excellent choice for high-speed switching applications such as DC-DC converters, power management systems, and motor control circuits.

The device also incorporates advanced technology to ensure reliability and stability under various conditions. It features a maximum junction temperature of 150°C, which provides a margin for thermal stress during operation. Additionally, the DMG4407SSS is designed with protection features such as over-temperature and over-current protection, enhancing its durability and lifespan.

For designers and engineers looking for a robust P-Channel MOSFET that can deliver high efficiency and reliability, the DMG4407SSS from Diodes Incorporated is an excellent choice. Its compact package, low on-resistance, and fast switching capabilities make it a versatile component suitable for a wide array of power management tasks in both commercial and industrial settings.

Whether it's for power supply circuits, load switches, or any other application requiring a high-quality P-Channel MOSFET, the DMG4407SSS stands out with its performance and reliability, backed by Diodes Incorporated's reputation for excellence in semiconductor technology.

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Pricing & Ordering

Quantity Unit Price Ext. Price
260+ $0.2252 $58.5520
625+ $0.1848 $115.5000
970+ $0.1790 $173.6300
1,335+ $0.1733 $231.3555
1,725+ $0.1675 $288.9375
2,310+ $0.1502 $346.9620
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 260 pcs
Order Increment : 1 pcs
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