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JAN2N3584

Part No JAN2N3584
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description NPN HIGH POWER SILICON TRANSISTOR | TRANS NPN 250V 2A TO-66
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Transistor Type NPN
Current - Collector (Ic) (Maximum) 2A
Voltage - Collector Emitter Breakdown (Maximum) 250V
Vce Saturation (Maximum) at Ib, Ic 750mV at 125mA, 1A
Current - Collector Cutoff (Maximum) 5mA
DC Current Gain (hFE) (Minimum) at Ic, Vce 25 at 1A, 10V
Maximum Power 2.5W
Temperature Range - Operating -65°C ~ 200°C
Mounting Style Through Hole
Manufacturer Package TO-213AA, TO-66-2
Supplier Device Package TO-66 (TO-213AA)
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1191387-JAN2N3584
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian JAN2N3584 CAD Model

Description

The JAN2N3584 is a NPN silicon transistor manufactured by Microsemi Corporation. It is designed for high-reliability applications, meeting stringent military and aerospace standards. This transistor is commonly used in switching and amplifier circuits where robust performance and consistent characteristics are critical.

Applications

  • High-reliability switching circuits
  • Amplifier stages in aerospace and military equipment
  • Voltage regulators
  • Current source circuits
  • Driver circuits for various loads

Features

  • NPN Silicon Transistor
  • High Reliability Screening (JAN Level)
  • High Breakdown Voltage
  • Low Saturation Voltage
  • Hermetically Sealed Package

Benefits

  • Guaranteed Performance in Harsh Environments
  • Long-term Reliability and Stability
  • Improved System Performance Due to Consistent Characteristics
  • Reduced Downtime and Maintenance Costs

Specifications

The JAN2N3584 typically features a collector-emitter breakdown voltage (VCEO) of around 300V, a collector current (IC) rating of approximately 0.5A, and a power dissipation (PD) of around 5W (depending on the specific operating conditions and package). Its current gain (hFE) is typically in the range of 20 to 100. The device is packaged in a hermetically sealed TO-5 or similar through-hole package, ensuring environmental protection and long-term stability. The operating junction temperature range is typically from -65°C to +200°C. The saturation voltage is low, minimizing power loss in switching applications. The high breakdown voltage allows it to be used in high voltage applications.

The JAN2N3584's high-reliability screening ensures that it can withstand harsh environmental conditions, making it suitable for aerospace and military applications. The low saturation voltage reduces power dissipation and improves efficiency. The hermetically sealed package protects the device from moisture and other contaminants, extending its lifespan. It is commonly used as a switch or amplifier in a variety of aerospace and military circuits where predictable performance is required over extreme operating environments.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $71.7342 $71.7342
2+ $58.8588 $117.7176
4+ $57.0195 $228.0780
5+ $55.1801 $275.9005
6+ $53.3408 $320.0448
8+ $47.8228 $382.5824
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,300 pieces
Order Increment : 1 pcs
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