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DMG4468LK3-13

Part No DMG4468LK3-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 9.7A TO252
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.95V @ 250μA
Max Gate Charge 18.85nC @ 10V
Max Input Capacitance 867pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.68W (Ta)
Maximum Rds On at Id,Vgs 16 mOhm @ 11.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 014386-DMG4468LK3-13
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMG4468LK3-13 CAD Model

Description

Introducing the DMG4468LK3-13 MOSFET from Diodes Incorporated

The DMG4468LK3-13 is a state-of-the-art, P-Channel enhancement mode MOSFET brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This product is designed to deliver high efficiency and reliability for a wide range of applications, including power management, load switching, and battery protection circuits.

Constructed with advanced trench technology, the DMG4468LK3-13 offers excellent on-resistance and low gate charge, which translates into reduced conduction and switching losses. This makes it an ideal choice for power-sensitive applications where energy efficiency is paramount. The MOSFET operates at a -30V drain-source voltage (Vds) and has a continuous drain current (Id) of -8.6A, providing robust performance for various circuit designs.

The compact form factor of the DMG4468LK3-13 is encapsulated in a RoHS-compliant, environmentally friendly SOT-23 package. This small footprint allows for high-density PCB layouts and is perfect for space-constrained applications. Moreover, its low threshold voltage ensures that it can be driven by low-voltage logic signals, simplifying the interface with microcontrollers and other logic devices.

Key features of the DMG4468LK3-13 include:

  • Low on-resistance (Rds(on)) for improved efficiency
  • High-speed switching capabilities
  • Low threshold voltage (Vgs(th)) for easy drive
  • High forward transconductance (gfs) for better signal amplification
  • Thermal stability for reliable operation over a wide temperature range

Applications that can benefit from the DMG4468LK3-13 include:

  • Power management systems
  • Battery-powered devices
  • DC-DC converters
  • Load switch circuits
  • Portable electronics

Diodes Incorporated's commitment to quality ensures that the DMG4468LK3-13 MOSFET meets the highest standards for performance and reliability. Whether you're designing a sophisticated power management system or a simple load switch, the DMG4468LK3-13 provides an efficient and compact solution for your electronic circuit needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
190+ $0.2700 $51.3000
455+ $0.2215 $100.7825
700+ $0.2146 $150.2200
965+ $0.2077 $200.4305
1,250+ $0.2008 $251.0000
1,670+ $0.1800 $300.6000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,330 pieces
MOQ: 190 pcs
Order Increment : 1 pcs
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