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DMG4932LSD-13

Part No DMG4932LSD-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 9.5A 8SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9.5A
Maximum Rds On at Id,Vgs 15 mOhm @ 9A, 10V
Gate-Source Threshold Voltage 2.4V @ 250μA
Max Gate Charge 42nC @ 10V
Max Input Capacitance 1932pF @ 15V
Maximum Power Dissipation 1.19W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 110392-DMG4932LSD-13
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian DMG4932LSD-13 CAD Model

Description

Introducing the DMG4932LSD-13 MOSFET from Diodes Incorporated

The DMG4932LSD-13 is a high-performance, dual N-channel enhancement mode field effect transistor (MOSFET) designed by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This MOSFET is engineered to meet the demanding requirements of modern electronic devices, offering a compact, power-efficient solution for a wide range of applications.

Key Features:

  • Low On-Resistance: The DMG4932LSD-13 boasts an extremely low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved efficiency in electronic circuits. This feature is particularly beneficial in applications where power conservation is critical.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is ideal for high-frequency applications, ensuring minimal switching losses and better performance in power conversion and management systems.
  • Dual N-Channel Configuration: The dual N-channel setup allows for the integration of two independent MOSFETs in a single package, saving space on the PCB and simplifying design and layout considerations.
  • PowerDI5060-8 Package: Encased in the compact PowerDI5060-8 package, the DMG4932LSD-13 offers a small footprint without compromising on power handling capabilities. This packaging also provides excellent thermal performance, ensuring reliable operation even under high load conditions.
  • Lead-Free and RoHS Compliant: In line with modern environmental standards, this MOSFET is fully lead-free and RoHS compliant, making it suitable for use in eco-friendly products and applications.

Applications:

The versatility of the DMG4932LSD-13 MOSFET makes it an excellent choice for a variety of applications, including:

  • Power Management Systems
  • DC/DC Converters
  • Load Switches
  • Battery Management Circuits
  • Motors and Relay Drivers

With its robust design and advanced features, the DMG4932LSD-13 from Diodes Incorporated stands out as a superior choice for designers looking to enhance efficiency and performance in their electronic products. Its combination of low on-resistance, high-speed switching, compact form factor, and environmental compliance makes it a go-to component for a multitude of power-switching applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
255+ $0.2287 $58.3185
615+ $0.1883 $115.8045
950+ $0.1825 $173.3750
1,320+ $0.1756 $231.7920
1,705+ $0.1698 $289.5090
2,275+ $0.1525 $346.9375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,080 pieces
MOQ: 255 pcs
Order Increment : 1 pcs
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