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DMG8N65SCT

Part No DMG8N65SCT
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 8A TO220AB
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features N-Channel 650 V 8A (Tc) 125W (Tc) Through Hole TO-220AB
Manufacturer Diodes Incorporated
Series Automotive, AEC-Q101
Package Tube
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Through Hole
Package TO-220-3
Case / Package TO-220AB
Family Name DMG8N65
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 50
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 868917-DMG8N65SCT
Ultra Librarian 3D Model Ultra Librarian DMG8N65SCT CAD Model

Description

DMG8N65SCT - A High-Performance Power MOSFET from Diodes Incorporated

The DMG8N65SCT is a cutting-edge power MOSFET designed and manufactured by Diodes Incorporated, a leading global provider of high-quality semiconductor products. This MOSFET is part of Diodes Incorporated's extensive range of power management devices, characterized by their efficiency and reliability. The DMG8N65SCT is specifically engineered to cater to the demanding needs of modern electronic circuits requiring high power density and energy efficiency.

The device features a drain-source voltage (V<sub>DS) of 650V, which makes it suitable for high-voltage applications. Its continuous drain current (I<sub>D) is rated at 8A, ensuring it can handle significant power without overheating. The DMG8N65SCT is designed using advanced trench MOSFET technology, which reduces on-state resistance (R<sub>DS(on)) and minimizes conduction losses, thereby enhancing overall device performance.

With a low threshold voltage (V<sub>GS(th)), the DMG8N65SCT ensures easy drive capability, reducing the complexity and cost of the drive circuitry. Its fast switching speed is another notable feature, which is crucial for high-frequency applications. The MOSFET also boasts a robust body diode, which can handle high-speed switching and is suitable for hard-switching conditions.

One of the significant advantages of the DMG8N65SCT is its thermal performance. The device is housed in a TO-263 package, which is known for its excellent heat dissipation properties. This packaging, combined with the low junction-to-case thermal resistance, ensures stable operation even under high temperature and stress conditions, thereby prolonging the life of the product.

Applications for the DMG8N65SCT are diverse and include power supplies, lighting, motor drives, and other power conversion systems. Its high efficiency, reliability, and thermal stability make it an ideal choice for designers looking to optimize their power systems for performance and durability.

Overall, the DMG8N65SCT from Diodes Incorporated is a testament to the company's commitment to providing high-performance semiconductor solutions that meet the evolving needs of the electronics industry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.2090 $61.2540
14+ $8.3772 $117.2808
22+ $8.1150 $178.5300
30+ $7.8540 $235.6200
39+ $7.5918 $296.0802
51+ $6.8064 $347.1264
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,260 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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