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DMN1017UCP3-7

Part No DMN1017UCP3-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET BVDSS: 8V 24V X3-DSN1010- / Trans MOSFET N-CH 12V 7.5A 3-Pin X3-DSN T/R
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Channel Type Type N
Technology MOSFET
Drain Source Voltage 12V
Current - Continuous Drain (Id) @ 25°C 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 3.3V
Vgs(th) (Maximum) @ Id 1V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 16nC @ 3.3V
Input Capacitance (Ciss) (Maximum) @ Vds 1503pF @ 6V
Vgs (Maximum) ±8V
Power Dissipation (Maximum) 1.47W
Rds On (Maximum) @ Id, Vgs 17 mOhm @ 5A, 3.3V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package X3-DSN1010-3
Package 3-XDFN
Win Source Part Number 794806-DMN1017UCP3-7
Popularity Medium
Supply and Demand Status Limited
Family Name DMN1017UCP3
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian DMN1017UCP3-7 CAD Model

Description

Product Overview: DMN1017UCP3-7

The DMN1017UCP3-7 is a high-performance, N-channel enhancement mode field effect transistor (FET) from Diodes Incorporated, a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, analog, and mixed-signal semiconductor markets. This product is specifically designed to maximize efficiency in power management tasks, and it is an ideal component for a wide range of electronic applications.

Key Features

  • Low On-Resistance: The DMN1017UCP3-7 boasts a very low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved power efficiency in applications where it is used.
  • High Continuous Drain Current: With a high continuous drain current (I<sub>D), this MOSFET can handle significant amounts of current, making it suitable for demanding power applications.
  • High-Speed Switching: The device is designed for high-speed switching operations, which is crucial for reducing switching losses and improving performance in power conversion systems.
  • Low Threshold Voltage: A low threshold voltage (V<sub>GS(th)) ensures that the DMN1017UCP3-7 can be easily driven at lower gate voltages, enhancing its compatibility with logic-level circuits.
  • Surface Mount Package: The DMN1017UCP3-7 is available in a compact, surface-mount PowerDI3333-8 package, which is ideal for space-constrained applications and allows for efficient heat dissipation.

Applications

The DMN1017UCP3-7 is versatile and can be used in a variety of applications, including:

  • Power Management Circuits
  • DC-DC Converters
  • Motor Drives
  • Battery Management Systems
  • Load Switches
  • Computing and Server Power Supplies

Quality and Reliability

Diodes Incorporated is committed to providing products that meet the highest standards of quality and reliability. The DMN1017UCP3-7 is no exception and is manufactured in state-of-the-art facilities, ensuring that it meets the stringent requirements of the electronics industry. With its robust design and proven performance, this MOSFET is an excellent choice for designers looking for a reliable and efficient power management solution.

For detailed specifications and application notes, customers are encouraged to review the official datasheet and product documentation available from Diodes Incorporated.

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Pricing & Ordering

Quantity Unit Price Ext. Price
260+ $0.2227 $57.9020
635+ $0.1827 $116.0145
980+ $0.1771 $173.5580
1,350+ $0.1714 $231.3900
1,745+ $0.1656 $288.9720
2,335+ $0.1485 $346.7475
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,000 pieces
MOQ: 260 pcs
Order Increment : 1 pcs
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