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DMN10H700S-13

Part No DMN10H700S-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 700MA SOT23  /  N-Channel 100 V 700mA (Ta) 400mW (Ta) Surface Mount SOT-23-3
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 700mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 700mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 235 pF @ 50 V
FET Feature Standard
Power Dissipation (Max) 400mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number DMN10
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 10,000
Win Source Part Number 1120516-DMN10H700S-13
Ultra Librarian 3D Model Ultra Librarian DMN10H700S-13 CAD Model

Description

Introducing the DMN10H700S-13 MOSFET from Diodes Incorporated

The DMN10H700S-13 is a high-performance, N-Channel enhancement mode MOSFET designed by Diodes Incorporated, a leading manufacturer in the semiconductor market. This power MOSFET is a testament to the company's commitment to providing energy-efficient and reliable components for a wide range of electronic applications.

With its compact SOT-23 package, the DMN10H700S-13 is a perfect fit for space-constrained applications, offering a minimal footprint without compromising on power and performance. This makes it an ideal choice for portable electronics, power management circuits, and various other applications where efficiency is key.

Key Features of the DMN10H700S-13:

  • Low On-Resistance: The DMN10H700S-13 boasts a low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High Continuous Drain Current: This MOSFET can handle a high continuous drain current (I<sub>D), making it suitable for handling larger loads without overheating or performance degradation.
  • Low Threshold Voltage: The low threshold voltage (V<sub>GS(th)) ensures that the device can be easily turned on with lower gate voltages, which is beneficial for battery-operated devices.
  • Fast Switching Speed: Fast switching is a hallmark of the DMN10H700S-13, which is critical for high-frequency applications and for reducing switching losses.
  • High-Temperature Performance: It is designed to operate reliably over a wide temperature range, ensuring stability and functionality even under thermal stress.

The DMN10H700S-13 also features built-in ESD protection, safeguarding the device from electrostatic discharges that can occur during handling or operation. This added layer of security helps to extend the lifespan of the product and the devices it is used in.

Whether you're designing power supplies, DC-DC converters, or looking to optimize the power efficiency in your next project, the DMN10H700S-13 from Diodes Incorporated is a versatile and reliable choice that will not disappoint. Its combination of low power consumption, high-speed switching, and robust thermal performance makes it a standout component in its class.

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Pricing & Ordering

Quantity Unit Price Ext. Price
525+ $0.0957 $50.2425
1,120+ $0.0896 $100.3520
1,735+ $0.0865 $150.0775
2,495+ $0.0803 $200.3485
3,240+ $0.0772 $250.1280
4,050+ $0.0741 $300.1050
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 525 pcs
Order Increment : 1 pcs
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