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DMN15H310SK3-13

Part No DMN15H310SK3-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 8.3A TO252  /  N-Channel 150 V 8.3A (Tc) 32W (Ta) Surface Mount TO-252-3
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 8.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 310mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 405 pF @ 25 V
Power Dissipation (Max) 32W (Ta)
Temperature Range - Operating -55°C ~ 155°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number DMN15
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,500
Win Source Part Number 961206-DMN15H310SK3-13
Ultra Librarian 3D Model Ultra Librarian DMN15H310SK3-13 CAD Model

Description

Product Overview: DMN15H310SK3-13 from Diodes Incorporated

The DMN15H310SK3-13 is a high-performance, dual N-channel enhancement mode field-effect transistor (MOSFET) designed by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This MOSFET is part of their extensive range of discrete, analog, and mixed-signal components tailored for various applications across multiple industries.

The DMN15H310SK3-13 is encapsulated in a small and efficient PowerDI3333-8 package, which provides a compact footprint while maintaining excellent thermal performance. This makes it an ideal choice for space-constrained applications that require high power density and superior heat dissipation.

Key Features:

  • Low On-Resistance: The device offers a low on-resistance of typically 15mΩ at V<sub>GS = 10V, which translates to reduced conduction losses and improved overall efficiency in applications.
  • High Continuous Drain Current: It supports a high continuous drain current (I<sub>D) of up to 10A, allowing it to handle significant power without performance degradation.
  • Fast Switching Speed: Fast switching characteristics make the DMN15H310SK3-13 suitable for high-frequency power switching applications, contributing to reduced switching losses.
  • Low Gate Charge: The device is designed with a low gate charge (Q<sub>G), which minimizes the power required to drive the gate, thus saving energy and improving total system power efficiency.
  • High Power and Current Handling: With its robust package design, the MOSFET is capable of handling high power levels and currents, making it suitable for demanding applications.

Applications:

The DMN15H310SK3-13 is versatile and can be used in a wide range of applications, including:

  • Power management circuits
  • DC-DC converters
  • Motor drives
  • Battery management systems
  • Load switches
  • Power supplies

With its combination of low on-resistance, high current capability, and fast switching speeds, the DMN15H310SK3-13 from Diodes Incorporated is an excellent choice for designers looking to optimize power efficiency and performance in their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.3128 $57.8680
455+ $0.2566 $116.7530
700+ $0.2487 $174.0900
960+ $0.2407 $231.0720
1,245+ $0.2326 $289.5870
1,665+ $0.2086 $347.3190
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,770 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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