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DMN2004K-7

Part No DMN2004K-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 0.63A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 630mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Input Capacitance 150pF @ 16V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 350mW (Ta)
Maximum Rds On at Id,Vgs 550 mOhm @ 540mA, 4.5V
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 014405-DMN2004K-7
Family Name DMN2004K
Introduction Date July 27, 2006
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2025
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN2004K-7 CAD Model

Description

DMN2004K-7 MOSFET by Diodes Incorporated

The DMN2004K-7 is a high-performance, N-channel enhancement mode field effect transistor (MOSFET) designed and manufactured by Diodes Incorporated. This MOSFET is an ideal component for a wide range of applications that require efficient power management and conversion.

Featuring a compact SOT-23 package, the DMN2004K-7 offers a space-saving solution for modern electronic devices where board space is at a premium. Its small footprint does not compromise its performance, as it is capable of handling continuous drain currents up to 540 mA, with a maximum drain-source voltage (VDS) of 20V.

The low on-resistance (RDS(on)) of this MOSFET, typically just 500 mΩ at a VGS of 4.5V, ensures high efficiency and low power losses during operation. This characteristic makes it highly suitable for power-sensitive applications, such as portable electronics, where extending battery life is crucial.

The DMN2004K-7 is also characterized by its fast switching speed, which is a vital feature for high-frequency power switching applications. This rapid switching capability allows for better performance in DC-DC converters, load switches, and power management circuits. Moreover, the device's low threshold voltage (VGS(th)) ensures that it can be driven at lower gate voltages, making it compatible with low-voltage logic circuits.

Diodes Incorporated has designed the DMN2004K-7 with reliability in mind. It features built-in electrostatic discharge (ESD) protection, which safeguards the MOSFET from sudden voltage spikes during handling and operation. This ESD protection, along with the high-quality materials used in manufacturing, ensures a long operational lifespan and stable performance.

Overall, the DMN2004K-7 from Diodes Incorporated is an excellent choice for designers looking for an efficient, robust, and compact N-channel MOSFET. Its combination of low on-resistance, high current handling, and fast switching speeds make it a versatile component for a multitude of power management tasks in both commercial and industrial applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
990+ $0.0507 $50.1930
2,405+ $0.0416 $100.0480
3,725+ $0.0403 $150.1175
5,130+ $0.0390 $200.0700
6,635+ $0.0377 $250.1395
8,880+ $0.0338 $300.1440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 57,000 pieces
MOQ: 990 pcs
Order Increment : 1 pcs
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