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DMN2004WK-7

Part No DMN2004WK-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 540MA SC70-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 540mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Input Capacitance 150pF @ 16V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 200mW (Ta)
Maximum Rds On at Id,Vgs 550 mOhm @ 540mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-323
Dimension SC-70, SOT-323
Win Source Part Number 014408-DMN2004WK-7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN2004WK-7 CAD Model

Description

Product Overview: DMN2004WK-7 MOSFET by Diodes Incorporated

The DMN2004WK-7 is a high-performance, N-channel enhancement mode field-effect transistor (MOSFET) designed by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This MOSFET is part of the company's extensive range of discrete, analog, and mixed-signal components tailored for various electronic applications.

Featuring a compact SOT-323 package, the DMN2004WK-7 is optimized for space-constrained applications while providing robust electrical characteristics that make it suitable for high-efficiency power management tasks. Its miniature footprint allows for high-density PCB layouts, making it an excellent choice for portable and miniaturized electronic devices.

With a drain-source voltage (VDS) of 20V and a continuous drain current (ID) of 540mA, this MOSFET can handle moderate power requirements with ease. The low threshold voltage (VGS(th)) ensures that the device can be driven at lower gate voltages, enhancing its compatibility with low-voltage logic circuits and reducing overall power consumption.

The DMN2004WK-7 also features low on-resistance (RDS(on)), which minimizes losses due to conduction, thereby improving efficiency and thermal performance. This characteristic is particularly important in applications such as load switches, power management circuits, and DC-DC converters where energy efficiency is paramount.

The device's fast switching speed is another key attribute, contributing to reduced switching losses and better performance in high-frequency circuits. This makes the DMN2004WK-7 an ideal choice for use in PWM (Pulse Width Modulation) systems and other applications that require rapid switching capabilities.

In terms of protection, the DMN2004WK-7 offers built-in features such as gate-source ESD (Electrostatic Discharge) protection, ensuring the longevity and reliability of the MOSFET under harsh electrical environments. This makes it well-suited for sensitive electronic applications where component durability is critical.

Overall, the DMN2004WK-7 from Diodes Incorporated represents a blend of compact packaging, high efficiency, and robust electrical performance, making it a versatile component for designers seeking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
725+ $0.0694 $50.3150
1,755+ $0.0570 $100.0350
2,720+ $0.0552 $150.1440
3,750+ $0.0534 $200.2500
4,845+ $0.0516 $250.0020
6,480+ $0.0463 $300.0240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,008,611 pieces
MOQ: 725 pcs
Order Increment : 1 pcs
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