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DMN2028UFDF-7

Part No DMN2028UFDF-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 7.9A 6UDFN / N-Channel 20 V 7.9A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type F)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Diodes Incorporated
Packaging Reel - TR
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 7.9A
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 25mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 907 pF @ 10 V
Power Dissipation (Max) 660mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Surface Mount
Supplier Device Package U-DFN2020-6 (Type F)
Case / Package 6-UDFN Exposed Pad
Base Product Number DMN2028
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Part Number DMN2028UFDF-7DIDKR,DMN2028UFDF-7DITR,DMN2028UFDF-7DICT
Standard Package 3,000
Win Source Part Number 1324715-DMN2028UFDF-7
Ultra Librarian 3D Model Ultra Librarian DMN2028UFDF-7 CAD Model

Description

Product Overview: DMN2028UFDF-7

The DMN2028UFDF-7 is a high-performance, N-Channel MOSFET brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This MOSFET is designed to deliver efficient power management and signal conditioning in a wide range of applications.

Constructed with advanced trench technology, the DMN2028UFDF-7 offers excellent RDS(on) and low gate charge, making it highly efficient for power conversion. These features ensure minimal losses and heat generation, which is crucial for maintaining the longevity and reliability of electronic devices.

Key Features:

  • Low On-Resistance: The DMN2028UFDF-7 boasts an exceptionally low on-resistance (RDS(on)), which translates to reduced conduction losses and improved overall efficiency in circuits.
  • High Continuous Drain Current: With a high continuous drain current (ID) capability, this MOSFET can handle significant power levels, suitable for demanding applications.
  • Low Gate Charge (Qg): A low gate charge ensures faster switching speeds, which is beneficial for high-frequency operations and reduces switching losses.
  • PowerDI®3333-8 Package: The compact and thermally efficient PowerDI®3333-8 package allows for a smaller footprint on the PCB and excellent thermal performance, making it ideal for space-constrained applications.

Applications:

The DMN2028UFDF-7 is versatile and can be used in various applications, including:

  • Power Management for Consumer Electronics
  • DC-DC Converters
  • Power Supplies
  • Load Switches
  • Motor Control Circuits

Engineers and designers will appreciate the robustness and performance of the DMN2028UFDF-7 in their designs. With its high efficiency and reliability, this MOSFET from Diodes Incorporated is an excellent choice for those looking to enhance their power management systems.

For detailed specifications, application notes, and additional resources, customers are encouraged to visit the Diodes Incorporated website or contact their sales representatives. The DMN2028UFDF-7 is not just a component; it's a solution to your power management challenges.

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Pricing & Ordering

Quantity Unit Price Ext. Price
270+ $0.1856 $50.1120
660+ $0.1523 $100.5180
1,020+ $0.1475 $150.4500
1,405+ $0.1428 $200.6340
1,815+ $0.1380 $250.4700
2,430+ $0.1237 $300.5910
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,136 pieces
MOQ: 270 pcs
Order Increment : 1 pcs
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