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DMN2065UW-7

Part No DMN2065UW-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 20V 2.8A SOT323
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 5.4nC @ 4.5V
Max Input Capacitance 400pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 430mW (Ta)
Maximum Rds On at Id,Vgs 56 mOhm @ 2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-323
Dimension SC-70, SOT-323
Win Source Part Number 1033729-DMN2065UW-7
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMN2065UW-7 CAD Model

Description

DMN2065UW-7 MOSFET by Diodes Incorporated

The DMN2065UW-7 is a high-performance, N-Channel enhancement mode Field Effect Transistor (MOSFET) designed and manufactured by Diodes Incorporated. This MOSFET is a part of the extensive DMN series, which is well-regarded for its efficiency and reliability. The DMN2065UW-7 is particularly notable for its low on-resistance and minimal gate charge, making it an excellent choice for power management applications.

Constructed with advanced trench technology, the DMN2065UW-7 offers superior performance in a compact SOT-323 package. The device has been optimized for fast switching speeds and is capable of handling continuous drain currents of up to 1.8 A. This makes it an ideal choice for a wide range of applications, including load switch, power management, and other switching applications where space is at a premium and efficiency is crucial.

Key Features:

  • VDS (Drain-Source Voltage): 20V
  • ID (Continuous Drain Current): 1.8A
  • RDS(on) (Static Drain-Source On-Resistance): 65mΩ at VGS = 4.5V
  • Fast Switching Speed
  • Low Input Capacitance
  • Low Gate Threshold Voltage
  • High Power and Current Handling Capability
  • Halogen and Lead-Free, RoHS Compliant

The device's low threshold voltage ensures that it can be driven by low-voltage logic signals, making it compatible with a variety of control circuits and reducing power losses. The DMN2065UW-7 also features a low input capacitance, which minimizes drive losses and further enhances the efficiency of the overall system.

As an environmentally conscious product, the DMN2065UW-7 is both halogen and lead-free, complying with the RoHS directive, which makes it suitable for use in applications where environmental considerations are important.

Whether you are designing power supplies, DC-DC converters, or any other application requiring a high-efficiency and high-performance MOSFET, the DMN2065UW-7 from Diodes Incorporated stands out as a reliable and cost-effective solution. Its combination of low on-resistance, fast switching, and compact packaging makes it a versatile component for modern electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
580+ $0.0866 $50.2280
1,410+ $0.0711 $100.2510
2,180+ $0.0689 $150.2020
3,000+ $0.0667 $200.1000
3,885+ $0.0644 $250.1940
5,195+ $0.0578 $300.2710
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 53,200 pieces
MOQ: 580 pcs
Order Increment : 1 pcs
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