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DMN2075UDW-7

Part No DMN2075UDW-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 2.8A SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 7nC @ 4.5V
Max Input Capacitance 594.3pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 48 mOhm @ 3A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-363
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 101311-DMN2075UDW-7
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name DMN2075UDW
Introduction Date September 23, 2011
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian DMN2075UDW-7 CAD Model

Description

DMN2075UDW-7 MOSFET by Diodes Incorporated

The DMN2075UDW-7 is a high-performance, dual N-Channel enhancement mode field effect transistor (MOSFET) brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This MOSFET is designed using advanced trench technology to provide superior switching performance and high efficiency, making it an ideal choice for a wide range of power management applications.

Key Features

  • Low On-Resistance: The DMN2075UDW-7 features very low on-resistance (RDS(on)) which significantly reduces conduction losses, enhancing overall efficiency.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is suitable for high-frequency applications, ensuring minimal switching losses and better performance in power conversion systems.
  • Low Gate Charge: The device has a low gate charge (Qg), which reduces the power required to turn the MOSFET on and off, thereby improving the power efficiency of the application.
  • Dual MOSFET Configuration: The dual MOSFET configuration allows for compact designs by enabling the use of fewer components, which can save space and reduce costs in circuit designs.
  • PowerDI®5060-8 Package: Encased in a PowerDI®5060-8 package, the DMN2075UDW-7 ensures excellent thermal performance and a small footprint on the PCB.

Applications

The DMN2075UDW-7 is suitable for a variety of applications, including:

  • Power Management in Portable Devices
  • DC-DC Converters
  • Load Switches
  • Battery Management Systems
  • Power Supply Control

Technical Specifications

  • Drain-Source Voltage (VDS): 20V
  • Continuous Drain Current (ID): 6.5A
  • Power Dissipation (PD): 1.25W
  • Operating Temperature Range: -55°C to +150°C

With its robust design and reliable performance, the DMN2075UDW-7 MOSFET from Diodes Incorporated stands out as a superior choice for designers looking to optimize their power management solutions. Its combination of efficiency, speed, and compact packaging makes it a versatile component for modern electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
280+ $0.1800 $50.4000
680+ $0.1477 $100.4360
1,050+ $0.1431 $150.2550
1,445+ $0.1385 $200.1325
1,870+ $0.1339 $250.3930
2,500+ $0.1200 $300.0000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,700 pieces
MOQ: 280 pcs
Order Increment : 1 pcs
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