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DMN2500UFB4-7B

Part No DMN2500UFB4-7B
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 810mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 400mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.737 nC @ 4.5 V
Vgs (Max) ±6V
Input Capacitance (Ciss) (Max) @ Vds 60.67 pF @ 16 V
Power Dissipation (Max) 460mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package X2-DFN1006-3
Package / Case 3-XFDFN
Base Product Number DMN2500
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 730588-DMN2500UFB4-7B
Ultra Librarian 3D Model Ultra Librarian DMN2500UFB4-7B CAD Model

Description

Diodes Incorporated DMN2500UFB4-7B - N-Channel Enhancement Mode Field Effect Transistor

The DMN2500UFB4-7B is a high-performance, N-Channel Enhancement Mode Field Effect Transistor (MOSFET) designed and manufactured by Diodes Incorporated. This MOSFET is a testament to the company's commitment to providing power management solutions that meet the stringent requirements of modern electronic devices. Encased in a compact, flat lead, ultra-small X2-DFN1006-3 package, the DMN2500UFB4-7B offers designers a space-saving solution for their circuit designs.

With its advanced technology, the DMN2500UFB4-7B boasts a low on-resistance of just 0.072 Ohms at Vgs of 4.5V, which translates to enhanced efficiency and reduced power losses during operation. The device is capable of handling a continuous drain current of 680mA, making it suitable for a wide range of applications, from power management to load switching.

The DMN2500UFB4-7B operates at a maximum drain-source voltage (Vds) of 20V, which provides a good margin for various electronic circuits, ensuring reliability and stability. Its gate threshold voltage is specified at a minimum of 0.4V, making the device sensitive to low gate drive voltages, which is beneficial for low-power applications.

Another key feature of the DMN2500UFB4-7B is its low input capacitance of 45pF, which contributes to fast switching speeds. This characteristic is particularly important in high-frequency applications where rapid on-off cycles are crucial. Moreover, the MOSFET's low gate charge of just 0.84nC ensures that minimal energy is required for switching, further conserving power and improving overall system efficiency.

Designed for commercial and industrial applications, the DMN2500UFB4-7B is RoHS compliant and halogen-free, reflecting Diodes Incorporated's commitment to environmental sustainability. This product is ideal for portable electronics, power management circuits, and other applications where high efficiency, low power consumption, and space-saving are key considerations.

In summary, the DMN2500UFB4-7B from Diodes Incorporated is a versatile and efficient solution for designers looking to optimize their power management systems with a reliable, high-performance N-Channel MOSFET in an ultra-small package.

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Pricing & Ordering

Quantity Unit Price Ext. Price
820+ $0.0610 $50.0200
2,000+ $0.0501 $100.2000
3,095+ $0.0485 $150.1075
4,260+ $0.0470 $200.2200
5,510+ $0.0454 $250.1540
7,375+ $0.0407 $300.1625
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,440 pieces
MOQ: 820 pcs
Order Increment : 1 pcs
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