The HAF1004-90S-E is a high-power RF MOSFET from Renesas Electronics America, designed for use in high-frequency applications. This MOSFET offers high gain, high efficiency, and excellent linearity, making it suitable for a variety of RF power amplifier applications. It is specifically designed to operate at 90 MHz.

Applications

• RF power amplifiers
• HF/VHF radio transmitters
• Industrial heating systems
• Medical RF applications

Features

• High power RF MOSFET
• Operating frequency of 90 MHz
• High gain
• High efficiency
• Excellent linearity
• Internal input matching
• RoHS compliant

Benefits

• Increased power output in RF applications
• Reduced power consumption and heat generation
• Improved signal quality and fidelity
• Simplified circuit design due to internal matching
• Reliable performance in demanding RF environments
• Environmentally friendly due to RoHS compliance

Technical Specifications

The HAF1004-90S-E is an N-channel enhancement-mode RF power MOSFET optimized for operation at 90 MHz. It features internal input matching to simplify circuit design and improve performance. The device is designed for high gain and efficiency, making it suitable for use in RF power amplifiers.

Key specifications include:

• Operating Frequency: 90 MHz
• Supply Voltage: 28 V
• Output Power: 90 W
• Gain: 16 dB
• Efficiency: 70%
• Operating Temperature: -40°C to +150°C

The HAF1004-90S-E is a robust and high-performance RF MOSFET that provides excellent power output and efficiency for various RF applications. Its internal input matching and high gain make it an ideal choice for demanding RF power amplifier designs.