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DMN26D0UDJ-7

Part No DMN26D0UDJ-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 0.24A SOT963
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 240mA
Maximum Rds On at Id,Vgs 3 Ohm @ 100mA, 4.5V
Gate-Source Threshold Voltage 1.05V @ 250μA
Max Input Capacitance 14.1pF @ 15V
Maximum Power Dissipation 300mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-963
Win Source Part Number 1033737-DMN26D0UDJ-7
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name DMN26D0UDJ
Introduction Date May 25, 2010
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2025
Ultra Librarian 3D Model Ultra Librarian DMN26D0UDJ-7 CAD Model

Description

Diodes Incorporated DMN26D0UDJ-7 N-Channel Enhancement Mode Field Effect Transistor

The DMN26D0UDJ-7 from Diodes Incorporated is a high-performance, N-Channel Enhancement Mode Field Effect Transistor (MOSFET) designed for a wide range of applications. It is a versatile component that provides efficient power control and is suitable for various electronic circuits, including power management, load switching, and conversion systems.

This MOSFET is built using advanced trench technology that ensures optimal performance and reliability. It features a low on-resistance (R<sub>DS(on)), which minimizes conduction losses and improves overall efficiency, making it an excellent choice for power-sensitive designs. The DMN26D0UDJ-7 operates at a continuous drain current (I<sub>D) of 680mA, which allows it to handle moderate power levels effectively.

The device is housed in a small form factor, the SOT-23 package, which makes it suitable for space-constrained applications. The compact size does not compromise its thermal performance, as it can dissipate heat effectively, ensuring stable operation over a wide temperature range. Additionally, the DMN26D0UDJ-7 supports a maximum drain-source voltage (V<sub>DS) of 20V, providing a good safety margin for most low to medium voltage applications.

One of the key advantages of this MOSFET is its fast switching speed, which is essential for high-frequency applications. The low gate charge (Q<sub>G) and low input capacitance (C<sub>iss) contribute to its swift response to control signals, resulting in reduced switching losses and improved performance in applications such as DC-DC converters, motor drives, and power supplies.

For designers concerned with environmental standards, the DMN26D0UDJ-7 is compliant with RoHS and Green standards, making it an environmentally friendly choice. It is also characterized by its robustness, with built-in electrostatic discharge (ESD) protection, ensuring the device's longevity even in harsh electrical environments.

In summary, the DMN26D0UDJ-7 is a reliable and efficient solution for a variety of power control applications. Its advanced features and compact size make it a valuable component for designers looking to optimize their power management systems while maintaining a small footprint.

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Pricing & Ordering

Quantity Unit Price Ext. Price
245+ $0.2053 $50.2985
595+ $0.1685 $100.2575
920+ $0.1632 $150.1440
1,270+ $0.1579 $200.5330
1,640+ $0.1527 $250.4280
2,195+ $0.1369 $300.4955
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 220,000 pieces
MOQ: 245 pcs
Order Increment : 1 pcs
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