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DMN3010LFG-13

Part No DMN3010LFG-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11A PWRDI3333
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features N-Channel 30 V 11A (Ta), 30A (Tc) 900mW (Ta) Surface Mount PowerDI3333-8
Manufacturer Diodes Incorporated
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 8-PowerVDFN
Case / Package PowerDI3333-8
Family Name DMN3010
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 868984-DMN3010LFG-13
Ultra Librarian 3D Model Ultra Librarian DMN3010LFG-13 CAD Model

Description

Overview of DMN3010LFG-13 by Diodes Incorporated

The DMN3010LFG-13 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) produced by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This MOSFET is part of the company's extensive range of power management devices, designed to cater to a variety of applications requiring efficient power conversion and control.

Key Features

  • Low On-Resistance: The DMN3010LFG-13 boasts an extremely low on-resistance (RDS(on)), which translates to reduced conduction losses and improved power efficiency in applications.
  • High Continuous Drain Current: With its ability to support a high continuous drain current (ID), this MOSFET can handle significant power levels, making it suitable for high-power applications.
  • PowerDI™ 123 Package: Encased in the compact and thermally efficient PowerDI™ 123 package, the DMN3010LFG-13 offers excellent thermal performance and space-saving on PCBs.
  • Lead-Free and RoHS Compliant: The product is manufactured with environmentally friendly materials, adhering to the RoHS directive, which limits the use of hazardous substances in electronic equipment.

Applications

The DMN3010LFG-13 is ideal for a wide range of applications, including but not limited to:

  • Power Management Circuits
  • DC-DC Converters
  • Load Switches
  • Battery Management Systems
  • Motor Drives

Electrical Characteristics

Some of the key electrical characteristics of the DMN3010LFG-13 include a threshold voltage (VGS(th)) typically around 1.0V, and a maximum drain-source voltage (VDS) of 30V. The device also features fast switching speeds, which is crucial for applications requiring quick response times.

Quality and Reliability

Diodes Incorporated is committed to delivering products with the highest standards of quality and reliability. The DMN3010LFG-13 is subjected to rigorous testing and quality control measures to ensure that it meets the stringent requirements of the industry and provides reliable performance in the field.

For engineers and designers looking for a robust, high-efficiency N-Channel MOSFET, the DMN3010LFG-13 from Diodes Incorporated stands out as a strong contender, offering both performance and reliability in a compact package.

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Pricing & Ordering

Quantity Unit Price Ext. Price
205+ $0.2873 $58.8965
490+ $0.2358 $115.5420
760+ $0.2284 $173.5840
1,045+ $0.2211 $231.0495
1,355+ $0.2137 $289.5635
1,810+ $0.1915 $346.6150
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,900 pieces
MOQ: 205 pcs
Order Increment : 1 pcs
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