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DMN3055LFDB-7

Part No DMN3055LFDB-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2 N-CH 5A UDFN2020-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features Mosfet Array 2 N-Channel (Dual) 5A (Ta) Surface Mount U-DFN2020-6 (Type B)
Manufacturer Diodes Incorporated
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 6-UDFN Exposed Pad
Case / Package U-DFN2020-6 (Type B)
Family Name DMN3055
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 868999-DMN3055LFDB-7
Ultra Librarian 3D Model Ultra Librarian DMN3055LFDB-7 CAD Model

Description

DMN3055LFDB-7 - N-Channel Enhancement Mode Field Effect Transistor

The DMN3055LFDB-7 is a high-performance N-Channel Enhancement Mode Field Effect Transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, analog, and mixed-signal semiconductor markets. This particular device is engineered to deliver efficient power control and switching functionalities in a wide array of electronic applications.

Key Features and Benefits

  • Low On-Resistance: The DMN3055LFDB-7 boasts a low on-resistance (R<sub>DS(on)), which enhances its efficiency by minimizing power loss during operation.
  • High Threshold Voltage: With a high threshold voltage, this MOSFET ensures a robust performance, reducing the likelihood of unintended conduction.
  • Power Dissipation: It is capable of handling a continuous drain current, allowing for a significant amount of power dissipation, which is crucial for maintaining reliability and longevity.
  • Advanced Packaging: Encased in a compact PowerDI®3333-8 package, the DMN3055LFDB-7 offers excellent thermal performance and is optimized for PCB space conservation.
  • Lead-Free and RoHS Compliant: This product is environmentally friendly, complying with the Restriction of Hazardous Substances (RoHS) directive, making it suitable for use in green products.

Applications

The versatility of the DMN3055LFDB-7 allows it to be used in a variety of applications, including:

  • Power management circuits
  • DC-DC converters
  • Load switches
  • Battery protection circuits
  • Motor control systems

With its robust design and high-performance characteristics, the DMN3055LFDB-7 from Diodes Incorporated is an ideal choice for designers looking for a reliable and efficient N-Channel MOSFET. Whether for consumer electronics, automotive systems, or industrial equipment, this component ensures a blend of power efficiency and compactness, making it an essential part of modern electronic designs.

For detailed specifications and application notes, designers and engineers are encouraged to consult the datasheet and technical documentation provided by Diodes Incorporated.

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Pricing & Ordering

Quantity Unit Price Ext. Price
245+ $0.2071 $50.7395
520+ $0.1940 $100.8800
800+ $0.1875 $150.0000
1,150+ $0.1744 $200.5600
1,490+ $0.1678 $250.0220
1,860+ $0.1613 $300.0180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 94,930 pieces
MOQ: 245 pcs
Order Increment : 1 pcs
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