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DMN3150L-7

Part No DMN3150L-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 28V 3.2A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 28V
Continuous Drain Current at 25°C 3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Input Capacitance 305pF @ 5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.4W (Ta)
Maximum Rds On at Id,Vgs 85 mOhm @ 3.6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 014439-DMN3150L-7
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMN3150L-7 CAD Model

Description

DMN3150L-7 MOSFET by Diodes Incorporated

The DMN3150L-7 is a high-performance, N-channel enhancement mode field-effect transistor (FET) designed and manufactured by Diodes Incorporated, a leading global provider of semiconductors. This MOSFET is part of the company's extensive range of discrete, analog, and mixed-signal components that cater to various electronic applications. The DMN3150L-7 is particularly well-suited for high-efficiency power management tasks in a compact form factor.

Key Features

  • Low On-Resistance: The DMN3150L-7 features a low on-resistance (RDS(on)) of typically 42 mΩ at VGS = 10V, which contributes to reduced power loss and improved energy efficiency in circuit designs.
  • High Continuous Drain Current: It supports a high continuous drain current (ID) of up to 4.2 A, making it capable of handling significant power levels in a variety of applications.
  • Enhancement Mode: As an enhancement-mode MOSFET, it requires a positive gate voltage to conduct, allowing for easy control within electronic circuits.
  • Low Threshold Voltage: The device operates with a low threshold voltage (Vth), ensuring that it can be driven by low-voltage logic signals.
  • High-Speed Switching: The DMN3150L-7 is optimized for fast switching speeds, which is essential for applications requiring high-frequency operation.

Applications

The DMN3150L-7 is versatile and can be used in a wide range of applications, including:

  • Power Management Circuits
  • DC-DC Converters
  • Load Switches
  • Battery Management Systems
  • Motor Drives
  • Computing and Storage Platforms

Package Information

The MOSFET is presented in a compact SOT-23 package, which is highly favored for space-constrained applications. Its small footprint and low profile make it an ideal choice for portable electronics and other applications where size and weight are critical considerations.

Quality and Reliability

Diodes Incorporated ensures that the DMN3150L-7, like all of its products, meets rigorous quality and reliability standards. This MOSFET is RoHS compliant and free from hazardous substances, aligning with environmental regulations and promoting sustainability in electronic designs.

For detailed specifications and application notes, customers are encouraged to consult the official datasheet and product documentation available on the Diodes Incorporated website.

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Pricing & Ordering

Quantity Unit Price Ext. Price
635+ $0.0789 $50.1015
1,545+ $0.0648 $100.1160
2,395+ $0.0627 $150.1665
3,295+ $0.0607 $200.0065
4,260+ $0.0587 $250.0620
5,705+ $0.0526 $300.0830
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 90,000 pieces
MOQ: 635 pcs
Order Increment : 1 pcs
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