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DMN33D8LT-13

Part No DMN33D8LT-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 115MA SOT523 / N-Channel 30 V 115mA (Ta) 240mW (Ta) Surface Mount SOT-523
Datasheet
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Series -
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V
Rds On (Max) @ Id, Vgs 5Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 0.55 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 48 pF @ 5 V
FET Feature -
Power Dissipation (Max) 240mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-523
Package / Case SOT-523
Base Product Number DMN33
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1354104-DMN33D8LT-13
Ultra Librarian 3D Model Ultra Librarian DMN33D8LT-13 CAD Model

Description

Diodes Incorporated DMN33D8LT-13 Product Overview

The DMN33D8LT-13 from Diodes Incorporated is a high-performance, N-channel enhancement mode field-effect transistor (FET) that comes in a compact, surface-mount, SOT-523 package. This MOSFET is designed to deliver efficient power management and signal processing in a wide range of applications. Its small footprint and low on-resistance make it an ideal choice for portable electronics, where space is at a premium and energy efficiency is crucial.

Key Features

  • Low On-Resistance: The DMN33D8LT-13 boasts an exceptionally low on-resistance, which translates to reduced power loss and improved efficiency in electronic circuits.
  • High-Speed Switching: This MOSFET is capable of high-speed switching operations, making it suitable for applications that require fast response times, such as power supplies and DC-DC converters.
  • Low Threshold Voltage: The device operates at a low threshold voltage, ensuring that it can be controlled with lower gate drive voltages, which is beneficial for battery-operated devices.
  • Surface-Mount Package: The small SOT-523 package allows for a compact design footprint, which is critical in mobile devices, wearables, and other space-constrained applications.

Applications

  • Power Management Systems
  • DC-DC Converters
  • Battery-Powered Devices
  • Load Switches
  • Portable Electronics

The DMN33D8LT-13 is designed to meet the stringent requirements of modern electronic devices. Its combination of low on-resistance and high-speed switching capability ensures that power is conserved, making it an environmentally friendly option. The MOSFET's robustness and reliability are backed by Diodes Incorporated's commitment to quality, making it a trusted component in any circuit design.

Engineers looking for a versatile and efficient MOSFET will find the DMN33D8LT-13 to be an excellent choice for their designs. Whether it's for managing power in a smartphone or controlling the motor in a handheld tool, this MOSFET provides the performance and reliability that today's electronic applications demand.

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Pricing & Ordering

Quantity Unit Price Ext. Price
345+ $0.1456 $50.2320
840+ $0.1195 $100.3800
1,300+ $0.1157 $150.4100
1,790+ $0.1120 $200.4800
2,310+ $0.1083 $250.1730
3,090+ $0.0971 $300.0390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 80,000 pieces
MOQ: 345 pcs
Order Increment : 1 pcs
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