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DMN3730U-7

Part No DMN3730U-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 750MA SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 950mV @ 250μA
Max Gate Charge 1.6nC @ 4.5V
Max Input Capacitance 64.3pF @ 25V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 450mW (Ta)
Maximum Rds On at Id,Vgs 460 mOhm @ 200mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1033767-DMN3730U-7
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian DMN3730U-7 CAD Model

Description

Product Overview: DMN3730U-7 by Diodes Incorporated

The DMN3730U-7 is a high-performance, N-channel enhancement mode Field Effect Transistor (FET) designed by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This MOSFET is part of Diodes Incorporated's extensive range of discrete, analog, and mixed-signal components, catering to a wide array of electronic applications.

Encased in a compact SOT-23 package, the DMN3730U-7 is engineered for space-conscious applications, providing a perfect solution for portable and space-limited electronics. Its small footprint does not compromise its functionality or performance, making it an excellent choice for designers looking for a power management solution that balances space and efficiency.

The DMN3730U-7 boasts a drain-source voltage (V<sub>DS) of 30V, which allows it to handle moderate voltages effectively while operating. Additionally, it has a continuous drain current (I<sub>D) of up to 7.3A at 25°C, providing ample current handling capability for a range of applications. The low threshold voltage ensures that the device can be driven at lower gate voltages, making it compatible with low-voltage logic and reducing power consumption.

With a low on-resistance (R<sub>DS(on)) of just 24mΩ at a V<sub>GS of 10V, the DMN3730U-7 minimizes conduction losses and improves overall efficiency, which is critical for power-sensitive designs. This feature is especially beneficial in applications such as DC-DC converters, power management circuits, and load switches, where energy efficiency is paramount.

The DMN3730U-7 also features fast switching speeds, which is essential for high-frequency circuit designs. This enables the MOSFET to switch on and off rapidly, reducing transition losses and improving performance in switching applications.

With its robust thermal performance and high reliability, the DMN3730U-7 is suited for a diverse range of applications, including consumer electronics, computing devices, power supply units, and more. Its compliance with RoHS standards ensures that it meets environmental regulations, making it a responsible choice for eco-conscious product designs.

In summary, the DMN3730U-7 by Diodes Incorporated is a versatile and efficient N-channel MOSFET that offers designers a compact, high-performance solution for a wide variety of power management tasks.

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Pricing & Ordering

Quantity Unit Price Ext. Price
885+ $0.0565 $50.0025
2,160+ $0.0464 $100.2240
3,345+ $0.0449 $150.1905
4,600+ $0.0435 $200.1000
5,955+ $0.0420 $250.1100
7,960+ $0.0377 $300.0920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 885 pcs
Order Increment : 1 pcs
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