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TJ80S04M3L(T6L1,NQ

Part No TJ80S04M3L(T6L1,NQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 80A DPAK  /  P-Channel 40 V 80A (Ta) 100W (Tc) Surface Mount DPAK+
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series U-MOSVI
Package Tape & Reel (TR)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 80A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 5.2mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 158 nC @ 10 V
Vgs (Max) +10V, -20V
Input Capacitance (Ciss) (Max) @ Vds 7770 pF @ 10 V
Power Dissipation (Max) 100W (Tc)
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package DPAK+
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number TJ80S04
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names TJ80S04M3L(T6L1NQ,TJ80S04M3LT6L1NQ
Standard Package 2,000
Win Source Part Number 1066252-TJ80S04M3L(T6L1,NQ
Ultra Librarian 3D Model Ultra Librarian TJ80S04M3L(T6L1,NQ CAD Model

Description

The Toshiba Semiconductor and Storage TJ80S04M3L(T6L1,NQ is an electronic component that falls under the category of discrete semiconductor products. It is a P-channel MOSFET that has a drain to source voltage of 40V and a continuous drain current of 80A @ 25°C. This component has a maximum power dissipation of 100W @ Tc and has a maximum gate charge of 158nC @ 10Vgs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0299 $51.4950
120+ $0.8451 $101.4120
185+ $0.8187 $151.4595
255+ $0.7923 $202.0365
330+ $0.7659 $252.7470
440+ $0.6866 $302.1040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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