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DMN3730UFB4-7B

Part No DMN3730UFB4-7B
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 750MA 3DFN
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 460mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.6 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 64.3 pF @ 25 V
Power Dissipation (Max) 470mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package X2-DFN1006-3
Package / Case 3-XFDFN
Base Product Number DMN3730
Standard Package 10,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 585489-DMN3730UFB4-7B
Ultra Librarian 3D Model Ultra Librarian DMN3730UFB4-7B CAD Model

Description

Introducing the DMN3730UFB4-7B MOSFET by Diodes Incorporated

The DMN3730UFB4-7B is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is designed to deliver efficient power management and signal amplification across a wide range of applications. With its compact form factor and robust capabilities, the DMN3730UFB4-7B is an ideal choice for designers looking to optimize their electronic designs for power and space.

Key Features:

  • Low On-Resistance: The device offers an extremely low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved power efficiency in your circuits.
  • High-Speed Switching: With fast switching speeds, the DMN3730UFB4-7B is suitable for high-frequency applications, ensuring minimal switching losses and better performance in power conversion systems.
  • PowerDI®3333-8 Package: Encased in the innovative PowerDI®3333-8 package, this MOSFET is not only space-saving but also provides excellent thermal performance, making it a reliable choice for thermally-sensitive applications.
  • Low Threshold Voltage: The device is characterized by a low threshold voltage, enabling it to be driven at lower gate voltages, which is beneficial for battery-operated devices and low-voltage logic interfaces.

Applications:

The DMN3730UFB4-7B is versatile and can be used in a variety of applications, including:

  • DC-DC Converters
  • Power Management Functions
  • Load Switches
  • Battery Protection Circuits
  • Motor Control Systems

Reliability and Quality Assurance:

Diodes Incorporated ensures that the DMN3730UFB4-7B meets the highest quality standards. Each MOSFET undergoes rigorous testing and verification processes to guarantee reliability and performance in even the most demanding conditions. With Diodes Incorporated's commitment to excellence, you can integrate the DMN3730UFB4-7B into your products with confidence, knowing that it will deliver consistent and reliable operation.

Whether you're designing power supplies, portable electronics, or industrial control systems, the DMN3730UFB4-7B from Diodes Incorporated provides the efficiency, speed, and compact size needed to enhance your next-generation electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
250+ $0.2038 $50.9500
600+ $0.1672 $100.3200
930+ $0.1620 $150.6600
1,280+ $0.1568 $200.7040
1,655+ $0.1515 $250.7325
2,210+ $0.1359 $300.3390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 250 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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