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DMN53D0LDW-13

Part No DMN53D0LDW-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 50V 0.36A SOT363 / Mosfet Array 2 N-Channel (Dual) 50V 360mA 310mW Surface Mount SOT-363
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Manufacturer Diodes Incorporated
Packaging Reel - TR
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 50V
Current - Continuous Drain (Id) @ 25°C 360mA
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 46pF @ 25V
Power - Max 310mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Surface Mount
Case / Package 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363
Base Product Number DMN53
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Part Number DMN53D0LDW-13DICT,DMN53D0LDW-13DI-ND,DMN53D0LDW-13DITR,DMN53D0LDW-13DI,DMN53D0LDW-13DIDKR
Standard Package 10,000
Win Source Part Number 1324650-DMN53D0LDW-13
Ultra Librarian 3D Model Ultra Librarian DMN53D0LDW-13 CAD Model

Description

Product Overview: DMN53D0LDW-13 from Diodes Incorporated

The DMN53D0LDW-13 is a high-performance, dual N-channel enhancement mode field-effect transistor (FET) designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, analog, and mixed-signal semiconductor markets.

This MOSFET is fabricated using an advanced trench technology to provide excellent RDS(on) and low gate charge. This design approach ensures that the DMN53D0LDW-13 offers reduced conduction losses and improved switching performance, making it suitable for a wide range of power management applications.

Key Features

  • Low On-Resistance: The device features a low on-resistance, which translates to reduced power losses and improved efficiency in operation.
  • Low Gate Threshold Voltage: With a low gate threshold voltage, the DMN53D0LDW-13 is easily driven by logic-level voltages, making it compatible with a variety of control circuits and microcontrollers.
  • Dual N-Channel: The dual N-Channel configuration allows for the integration of two independent transistors in a single package, saving space and reducing component count in circuit designs.
  • High-Speed Switching: It is optimized for high-speed switching applications, which is essential for efficient power regulation and conversion.
  • SOT-363 Package: Encased in a small SOT-363 package, the DMN53D0LDW-13 is ideal for space-constrained applications while providing excellent thermal performance.

Applications

The versatility of the DMN53D0LDW-13 makes it suitable for a broad range of applications, including:

  • Power Management
  • Load Switch
  • Battery Protection
  • DC-DC Converters
  • Power Supply Control
  • Motor Control

Diodes Incorporated's commitment to quality ensures that the DMN53D0LDW-13 meets the stringent requirements of commercial and industrial electronic devices. Whether you're designing power supplies, motor controllers, or looking to enhance battery management systems, the DMN53D0LDW-13 provides a reliable and efficient solution.

For detailed technical specifications, application notes, and support resources, customers are encouraged to visit the official Diodes Incorporated website or contact their local sales representative.

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Pricing & Ordering

Quantity Unit Price Ext. Price
635+ $0.0790 $50.1650
1,355+ $0.0740 $100.2700
2,100+ $0.0715 $150.1500
3,010+ $0.0665 $200.1650
3,910+ $0.0640 $250.2400
4,880+ $0.0615 $300.1200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 54,250 pieces
MOQ: 635 pcs
Order Increment : 1 pcs
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